2012
DOI: 10.1103/physrevlett.109.186101
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Atomistic Picture of Charge Density Wave Formation at Surfaces

Abstract: We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates… Show more

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Cited by 77 publications
(77 citation statements)
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“…Thereafter, no further change of intensity is expected for this process [dashed line in Fig. 2(a)] since the metastable false(4×1false) phase survives for nanoseconds 37,38 …”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Thereafter, no further change of intensity is expected for this process [dashed line in Fig. 2(a)] since the metastable false(4×1false) phase survives for nanoseconds 37,38 …”
Section: Resultsmentioning
confidence: 99%
“…1(a)]. Both structural phases are separated from each other by an energy barrier of about 40 meV 37,38 . Shortly after the laser pulse excites the surface, the PES transiently changes 36 and the surface undergoes a phase transition to the energetically favoured false(4×1false) structure on sub-ps timescales 13 .…”
Section: Atomic Wire System Si(111)(8 × 2) ↔ (4 × 1)-inmentioning
confidence: 99%
“…2(f)). While time-resolved reflection high-energy electron diffraction can well reveal surface-dominated dynamics, 34 we here study largely the bulk material, by measuring rough surfaces and Bragg reflections with rather high Miller indices at incidence angles of ∼5°. This is evident from the transmission-like diffraction patterns (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Global characteristics such as the transition temperature (T c ) and transport property of this In/Si(111)-4×1 surface have been reported to be affected significantly by small amounts of defects [13,[20][21][22][23][24][25][26][27][28]. In a recent series of diffraction experiments, the defects created by depositing metal atoms (In and Na) or by exposing the surface to gases (hydrogen and oxygen) were found to change the transition temperature [23][24][25]27].…”
Section: Introductionmentioning
confidence: 99%