Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 × 1) surface

Iron silicides formation on Si (100) and (111) surfaces through theoretical modeling of sputtering and annealing

“…Investigations of variable composition epitaxial thin films formation on silicon substrates attract much interest due to especially pronounced interconnection of optical, electrical, and magnetic properties in materials of this class [1][2][3][4], which can be controlled during synthesis. Epitaxial thin films of ferromagnetic Fe 1-x Si x are of particular interest because of possible application in silicon based spintronics [5][6][7].…”

Theoretical Exploration of Properties of Iron–Silicon Interface Constructed by Depositing Fe on Si(111)-(7×7)

“…Miranda et al [16] studied the initial stages of Fe growth on Si(111)-(7×7) and concluded that an amorphous layer with composition and density of states close to those of FeSi was formed, in agreement with reports of FeSi formation [17]. Eguchi et al [18] performed Molecules 2023, 28, 7181 2 of 13 an atomic-scale investigation of the initial stage of growth and interface formation of Fe on a H-terminated Si(111)-(1×1) surface and found the presence of a (111)-oriented bodycentered-cubic (bcc) Fe cluster structure on the substrate surface. It should be noted that growth of the pure Fe or the amorphous layer required a sufficient thickness deposited, making it difficult to obtain a clear structure of the Fe/Si(111) interface at the initial stage of Fe growth.…”

Synthesis of Heterostructured Metallic Films with Precisely Defined Multimodal Microstructures

“…Thus, the resulting metallic film is composed of monocrystalline and poly/nanocrystalline regions as defined by the pattern on the Si wafer. In this work, we chose Cu and Fe for demonstration because they grow epitaxially on Si(100) and Si(111) substrates, respectively, even at room temperature (RT). , …”

“…To demonstrate the generality of this method, we also synthesized Fe films with multimodal architectures on Si(111) wafers because Fe grows epitaxially on H-passivated Si(111) substrates. , In addition, Fe films should have a smaller grain size in the polycrystalline regions because Fe has a higher melting temperature and consequently, lower atomic mobility at RT. As a result, there would be a greater contrast in the grain size between the polycrystalline regions and the single crystal domains.…”

“…In this work, we chose Cu and Fe for demonstration because they grow epitaxially on Si(100) and Si(111) substrates, respectively, even at room temperature (RT). 37,38 Figure 2a−c shows the XRD characterization of a Cu film that was grown epitaxially on a Si(100) wafer. The θ−2θ scan (Figure 2a) shows high intensity peaks at 50.51, 69.10, and 117.03°which correspond to Cu(200), Si(400), and Cu(400) planes, respectively.…”