Atomistic Insights into Ultrafast SiGe Nanoprocessing

Abstract

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this but requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework that can simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale superlattice kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology, and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations as well as advanced applications to strained, defected, nanostructured, and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

Local Coordination Modulates the Reflectivity of Liquefied Si–Ge Alloys

“…However, the significance of liquids has greatly increased due to the utilization of ultrafast pulsed laser melting techniques in semiconductor processing, enhancing the electrical properties of the material in specific regions. The applications are diverse: initially, laser melting was used to increase the quantity of active dopants and improve the crystal quality of the material during regrowth. − Recently, the nonequilibrium regime created by pulsed lasers has also been exploited to achieve conditions of ultradoping and hyper-doping. In these cases, the concentration of active dopants can reach atomic percentages as high as 5–10%, exceeding the crystal solubility limit.…”