Atomically Thin Ga<sub>2</sub>S<sub>3</sub> from Skin of Liquid Metals for Electrical, Optical, and Sensing Applications

Alsaif, Manal M. Y. A.; Pillai, Naresh; Kuriakose, Sruthi; Walia, Sumeet; Jannat, Azmira; Xu, Kai; Alkathiri, Turki; Mohiuddin, M.; Daeneke, Torben; Kalantar‐zadeh, Kourosh; Ou, Jian Zhen; Zavabeti, Ali

doi:10.1021/acsanm.9b01133

Cited by 75 publications

(77 citation statements)

References 45 publications

(118 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This vdW heterojunctions are of high quality and feature high sensitivity for photodetection. Furthermore, with subsequent post‐processing steps, the skin of liquid metals can also be utilized to fabricate wafer‐scale 2D films, such as GaPO 4 , [ 70 ] GaN, [ 77 ] GaS, [ 69 ] and Ga 2 S 3 , [ 80 ] as well as microscale 2D single crystals, such as Mo 2 GaC [ 81 ] and GaN, [ 82 ] whatever they are intrinsically layered materials or non‐layered materials.…”

Section: Fabrication Strategies Of 2d Metal Oxides Via Liquid Metalsmentioning

confidence: 99%

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

Zhao

Zhang

2021

Advanced Materials

View full text Add to dashboard Cite

2D metal oxides (2DMOs) have been widely applied in the fields of electronic, magnetic, optical, and catalytic materials, owing to their rich surface chemistry and unique electronic structures. However, their further development faces challenges such as the difficulty in fabricating 2DMOs with unstable surface induced by strong surface polarizability, or the high cost and limited yield of the fabrication process. Recently, liquid metals have shown great potential in the fabrication of 2DMOs. The native oxide skin formed on the surface of liquid metals can be considered as a perfect 2D planar material. Due to the solubility, fluidity, and reactivity of liquid metals, they can act as the solvent, reactant, and interface in the fabrication of 2DMOs. Moreover, liquid metals undergo a liquid–solid phase transition, enabling them to be a symmetric matched substrate for growing high‐quality 2DMOs. An insightful survey of the recent progress in this research direction is presented. The features of liquid metals including good solubility, chemical reactivity, weak interface force, and liquid–solid phase transitions are introduced in detail. Furthermore, strategies for the fabrication of 2DMOs by virtue of these features are summarized comprehensively. Finally, current challenges and prospects regarding the future development in the fabrication of 2DMOs via liquid metals are highlighted.

show abstract

Section: Fabrication Strategies Of 2d Metal Oxides Via Liquid Metalsmentioning

confidence: 99%

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

Zhao

Zhang

2021

Advanced Materials

View full text Add to dashboard Cite

show abstract

“…[ 44 ] There is still another α‐phase modification crystallized in a hexagonal layer structure for Ga 2 S 3 . [ 45 ] The III–VI α′‐Ga 2 S 3 is a naturally defect semiconductor with one‐third of cation sites are vacant (Ga vacancies) and where the vacancies repeat throughout the monoclinic lattice periodically along the crystal's a ‐axis. [ 11 ] According to the analysis of XRD result in Figure 1a the lattice constants of monoclinic α′‐Ga 2 S 3 are determined to be a = 11.1 Å, b = 9.6 Å, c = 6.4 Å, and γ = 141.2°, respectively.…”

Section: Resultsmentioning

confidence: 99%

The Study of Optical Properties of III₂–VI₃ Defect Semiconductor Group Compounds Ga₂S₃, Ga₂Se₃, In₂S₃, and In₂Se₃

Lai

Chuang

et al. 2021

Advanced Photonics Research

View full text Add to dashboard Cite

Herein, high‐quality III2VI3 (III = Ga, In and VI = S, Se) single crystals are successfully grown by a chemical vapor transport method. X‐ray diffraction and Raman spectroscopy verify crystal structure, crystalline state, and vibration modes of the as‐grown III2VI3 crystals. According to the structure characterization, Ga2S3 is crystallized in a monoclinic structure, whereas Ga2Se3 belongs to the cubic zincblende phase. The crystal structure of In2S3 is tetragonal, whereas that of In2Se3 may come from a hexagonal layered structure. The four crystal structures are the most stable phases crystallized in Ga2S3, Ga2Se3, In2S3, and In2Se3, respectively. All the mostly stable phase in each of Ga2S3, Ga2Se3, In2S3, and In2Se3 is different and changing. This result identifies the crystalline nature of the III–VI group defect crystals. Modulated thermoreflectance (TR) and optical transmission measurements of the series III2VI3 compounds are, respectively, implemented. The results indicate that all defective Ga2S3, Ga2Se3, In2S3, and In2Se3 crystals are direct semiconductors. Photoluminescence of Ga2S3 and photoconductivity of the Ga2Se3, In2S3, and In2Se3 defect compounds are, respectively, carried out, and the experimental results are demonstrated and analyzed herein.

show abstract

“…Even if the growth temperature is reduced to 400 °C, the Ga catalyst is recyclable and used low-pressure CVD to synthesize a single-layer graphene film on a silica substrate. [65] Except for the synthesis of 2D graphene, other functional materials such as 2D Ga 2 S 3 semiconductor film, [67] 2H-molybdenum disulfide (MoS 2 ) material grown on h-BN substrate, [68] and WC nanomaterial with catalytic functions, [69] have been successfully prepared by CVD technology at the surface of liquid metal due A) The advantages of room temperature liquid metal for 2D materials preparation. Reproduced with permission.…”

Section: Chemical Vapor Deposition On the Surface Of Liquid Metalmentioning

confidence: 99%

Section: Interfacial Effects Of Liquid Metal In Gas Phasementioning

confidence: 99%

See 1 more Smart Citation

Interfacial Engineering of Room Temperature Liquid Metals

Liu

Cui

et al. 2021

Adv Materials Inter

View full text Add to dashboard Cite

and formed spontaneously and instantaneously upon exposure to atmospheric oxygen. [1-3] The thin film or "protective skin" covering the surface of RTLMs, generally dominated the physical properties and applications of the materials. This thin film is composed of a majority fraction of gallium oxides with a much smaller amount of indium and tin oxides. [4] When immersed in acidic or alkaline electrolytes, the oxidic films of RTLMs will be dissolved. [5-8] Due to the disorder of internal structure, the surface of the spherical liquid metal droplet is smooth and removable under the function of surface tension. [9,10] According to the size and structure of the solid substrate, the contact areas between the liquid metal and the solid substrate shows various wetting phenomena and corresponding application scenarios. [11-14] Surface chemical composition plays the primary role in dominating various phenomena and practical applications of RTLMs, which possessed the technologically important and scientifically interesting parameter. Gallium-based liquid metal is similar in structure to conventional solid metal, except for some covalent bonds inside, and the physicochemical properties have the commonality of both metallic solid and fluid properties. [15] The composition of gallium-based alloys can be assumed as made up of several atomic groups, within which the permutation of the solid remains, the binding energy between the liquid atoms remains strong, but the binding force between the groups was broken. The interface refers to the contact area between the different phases, which is the transition layer from one phase to another. The binding force of electrons that are relatively far away from the inner core is related to their energy, causing the interface behavior between different phases to be incompletely consistent. The surface is a type of interface, which specifically refers to the gas phase substance in interfacial behavior. In the processes of thermodynamics, [16,17] surface absorption, [18,19] controllable wetting, [6,13,20] material catalysis, [21,22] redox, and other physical and chemical reactions, [23,24] RTLMs inevitably contact with other substances with different phase states. Even the pure liquid metal would contact with oxygen in the air to yield a thin protective film. [17,25,26] Therefore, the investigation of interfacial behaviors between RTLMs and different surrounding mediums is helpful to renovate and broaden the understanding and applications of liquid metal. So far, there gradually appeared literature on phenomena and mechanism of the interfacial effect of RTLMs, such as synthesis of low-dimensional materials in the gas atmosphere, [27,28] Room temperature liquid metals (RTLMs), especially those made of galliumbased alloys belong to an emerging versatile material with fascinating characteristics derived from its simultaneous metallic and inherent fluidic natures. The interfacial effects of liquid metal involved in diverse surfaces thus play critical roles in explaining many fundamental phenomena....

show abstract

Atomically Thin Ga₂S₃ from Skin of Liquid Metals for Electrical, Optical, and Sensing Applications

Cited by 75 publications

References 45 publications

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

The Study of Optical Properties of III₂–VI₃ Defect Semiconductor Group Compounds Ga₂S₃, Ga₂Se₃, In₂S₃, and In₂Se₃

Interfacial Engineering of Room Temperature Liquid Metals

Contact Info

Product

Resources

About

Atomically Thin Ga2S3 from Skin of Liquid Metals for Electrical, Optical, and Sensing Applications

Cited by 75 publications

References 45 publications

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

The Study of Optical Properties of III2–VI3 Defect Semiconductor Group Compounds Ga2S3, Ga2Se3, In2S3, and In2Se3

Interfacial Engineering of Room Temperature Liquid Metals

Contact Info

Product

Resources

About

Atomically Thin Ga₂S₃ from Skin of Liquid Metals for Electrical, Optical, and Sensing Applications

The Study of Optical Properties of III₂–VI₃ Defect Semiconductor Group Compounds Ga₂S₃, Ga₂Se₃, In₂S₃, and In₂Se₃