Atomic understanding of the densification removal mechanism during chemical mechanical polishing of fused glass

Liu, Wei; Yuan, Shuai; Guo, Xiaoguang

doi:10.1016/j.apsusc.2022.153166

Cited by 20 publications

(5 citation statements)

References 45 publications

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“…Based on previous research, 46,47 two essential stages in the process of removing atoms from fused silica exist: namely the formation of Si (substrate)–O–Si (abrasive) bridge bonds and the breaking of surrounding chemical bonds under the pull of bridge bonds.(Si) + + (Si–OH) ⇌ (Si–O–Si) + H + H 3 O + ⇌ H + + H 2 O…”

Section: Resultsmentioning

confidence: 99%

A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics

Liu,

Zhang,

Feng

et al. 2024

Nanoscale

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Section: Resultsmentioning

confidence: 99%

A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics

Liu,

Zhang,

Feng

et al. 2024

Nanoscale

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“…Figure 1 shows the simulation model for polishing the SiC slab with a single cluster of SiO 2 , which is widely employed as an abrasive grain [ 37 , 38 ]. In this study, we chose the 4H-SiC structure for constructing the SiC slab, because it has high electron mobility anisotropy, low mobility, and lower growth rate, making it more suitable for applying electronic components.…”

Section: Computational Detailsmentioning

confidence: 99%

Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Man,

Sun,

Wang

et al. 2024

Micromachines

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To elucidate the atomic mechanisms of the chemical mechanical polishing (CMP) of silicon carbide (SiC), molecular dynamics simulations based on a reactive force field were used to study the sliding process of silica (SiO2) abrasive particles on SiC substrates in an aqueous H2O2 solution. During the CMP process, the formation of Si-O-Si interfacial bridge bonds and the insertion of O atoms at the surface can lead to the breakage of Si-C bonds and even the complete removal of SiC atoms. Furthermore, the removal of C atoms is more difficult than the removal of Si atoms. It is found that the removal of Si atoms largely influences the removal of C atoms. The removal of Si atoms can destroy the lattice structure of the substrate surface, leading the neighboring C atoms to be bumped or even completely removed. Our research shows that the material removal during SiC CMP is a comprehensive result of different atomic-level removal mechanisms, where the formation of Si-O-Si interfacial bridge bonds is widespread throughout the SiC polishing process. The Si-O-Si interfacial bridge bonds are the main removal mechanisms for SiC atoms. This study provides a new idea for improving the SiC removal process and studying the mechanism during CMP.

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“…Moreover, the water contact angle of FS surface does not change when treated with pure water, but it decreases with the concentration of the H 2 O 2 solution, implying the FS surface becomes more hydrophilic when it is treated with higher concentration H 2 O 2 solutions [19]. When treated with H 2 O 2 solutions, the under-coordinated Si and Si-O − groups on FS surface can react with H 2 O 2 ; as a result, more Si-OH groups are formed on the FS surface [15,20]. This can explain why the hydrophilicity of FS surface increases with the concentration of the H 2 O 2 solution (Figure 1a).…”

Section: Modified Adsorbed Water On Various Fs Surfacesmentioning

confidence: 99%

Effect of H2O2 Treatment on Mechanical and Mechanochemical Properties of Fused Silica

Liu

Yin

et al. 2023

Applied Sciences

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The surface properties of fused silica (FS) change after H2O2 treatment, but the surface and subsurface damage behaviors and their mechanisms under various physical contact conditions have not been elucidated yet. This work investigated the effect of H2O2 treatment on mechanical and mechanochemical properties of FS surface. The results show that the hydrophilicity and adsorbed water film thickness of the FS surface increase with the concentration of H2O2 solution. The surface damage, nanowear, and subsurface deformation of FS caused by indentation increase with the concentration of H2O2 solution, while the nanohardness and reduced modulus decrease. Further analysis revealed that the water activity on the FS surface plays a critical role in reducing the mechanical and mechanochemical properties. In addition, the treatment with H2O2 solution on the FS surface shows a weakly corrosive effect, which implies the H2O2 treatment can be an alternative method to remove the surface defects on FS optics.

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Atomic understanding of the densification removal mechanism during chemical mechanical polishing of fused glass

Cited by 20 publications

References 45 publications

A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics

A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics

Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Effect of H2O2 Treatment on Mechanical and Mechanochemical Properties of Fused Silica

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