Atomic transport in layered polycrystalline films of Ni-Ag and Ni-Cu-Ag

Wehr, A.G.; Barcz, A.

doi:10.1007/bf00882542

Cited by 4 publications

(2 citation statements)

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“…Ni/Ag scheme is known as an immiscible system in solid state unless a very high temperature over 700°C is applied. 14,15 However, Ag has poor thermal stability under the annealing process so that holes would grow within Ag layer by surface diffusion of Ag atoms and, in time, the Ag layer would be agglomerated. 8,9,16 Figure 4 shows the morphology change of Ag layer of the ITO/Ni/Ag contact according to annealing condition.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 1 shows the I-V characteristics of as-deposited and annealed ITO/Ag-based p-contacts, respectively. 14,15 However, Ag has poor thermal stability under the annealing process so that holes would grow within Ag layer by surface diffusion of Ag atoms and, in time, the Ag layer would be agglomerated. The specific contact resistance measured from CTLM patterns was 1.3 ϫ 10 −5 , 5.4 ϫ 10 −5 , 7.6 ϫ 10 −5 , and 4.3 ϫ 10 −4 ⍀ cm 2 , respectively, for as-deposited ITO/Ag, ITO/Ni/Ag, ITO/Ni/Ag/Ni/Au, and ITO/Ni/Ag/W/Cu.…”

Section: Methodsmentioning

confidence: 99%

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Thermally Stable and Highly Reflective ITO/Ag-Based Ohmic Contacts to p-GaN

Kim

Jang

Lee

2007

J. Electrochem. Soc.

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Thermal stability of indium tin oxide ͑ITO͒/Ag-based reflective contacts to p-GaN was investigated for their application to vertical structure GaN-based light-emitting diodes ͑LEDs͒. The ITO/Ag-based p-contacts showed good ohmic property with low specific contact resistance of 10 −4 -10 −5 ⍀ cm 2 . In order to study the thermal degradation of the ITO/Ag-based p-contacts, they were annealed at 400°C for 72 h in air. The reflectance of ITO/Ag and ITO/Ni/Ag was significantly reduced due to Ag degradation on annealing. However, the reflectance of ITO/Ni/Ag/Ni/Au and ITO/Ni/Ag/W/Cu was not degraded on annealing, but instead it was slightly increased to 81.4% and 83.7% at 460 nm, respectively, because the Ag reflector was protected with Ni/Au or W/Cu encapsulation layers. Moreover, on annealing of the ITO/Ag-based p-contacts, the vertical structure GaN-based LEDs with thermally stable ITO/Ni/Ag/Ni/Au and ITO/Ni/Ag/W/Cu p-contacts showed higher output power of 132 mW and 142 mW at 350 mA, respectively, compared to those with thermally unstable ITO/Ag and ITO/Ni/Ag p-contacts.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Thermally Stable and Highly Reflective ITO/Ag-Based Ohmic Contacts to p-GaN

Kim

Jang

Lee

2007

J. Electrochem. Soc.

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TEM Study of Nanocrystalline Ag_xNi_1-x Solid Solutions

Chiou

Tong

1997

Microsc Microanal

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Research on nanocrystalline materials, a new class of materials with a grain size of less than 20-30 nm in diameter, has flourished in the last decade because of their unique properties and Characteristics. While enormous amounts of nanocrystalline intermetallic alloys have been made by high energy mechanical alloying, little of this research has been carried out to study the formation of alloys of very low solid solubility elements such as Ag and Ni (0.1 at % at 750 °C).Upon quenching atoms in a state of high mobility, they can be “frozen” into unconventional random positions and thermodynamically metastable or unstable phases can be formed. This research was thus undertaken to synthesize nanocrystalline AgxNi1-x solid solution because fiber composites of this system have been widely used in low-voltage electrical circuits. This paper presents a TEM/AEM investigation of the traditionally immiscible nanocrystalline AgxNi1-xsolids formed by gas evaporation - vapor quenching method.

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