ATOMIC STRUCTURE OF THE <font>In</font> ON <font>Si</font>(111)(4 × 1) SURFACE

Collazo-Davila, C.; Marks, Laurence D.; Nishii, Kei; Tanishiro, Y.

doi:10.1142/s0218625x97000110

Cited by 42 publications

(21 citation statements)

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“…Growth of Si(111)-4 Â 1-In on vicinal Si(111) can produce a single domain structure, with the atomic chains aligned along the step edges [13,20]. While various models have been proposed for Si(111)-4 Â 1-In [19,21], a recent surface X-ray diffraction study has produced a structure that resolves various apparent inconsistencies in previous experimental results [22]. In particular, the model has two inequivalent types of In atom, in agreement with XPS results [23].…”

Section: The Si(111)-4 â 1-in Structurementioning

confidence: 99%

Optical Response of Low-Dimensional In Nanostructures Grown by Self-Assembly on Si Surfaces

McGilp

2001

phys. stat. sol. (a)

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The linear and nonlinear optical response from low dimensional In nanostructures grown by selfassembly on stepped Si single crystal surfaces are reviewed. Conventional surface characterisation techniques have provided compelling evidence that the atomic chains of the Si(111)-4 Â 1-In structure possess quasi-1D metallic character. Such low dimensional nanostructures grown by self-assembly on stepped Si surfaces are shown to be particularly suited to characterisation by surface and interface optical techniques. Firstly, low dimensional surface structures have the reduced symmetry that helps distinguish surface from bulk optical signals. Secondly, growth by self-assembly on such stepped structures often produces a dominant domain, thus reducing the problem of domain averaging of the optical signal. Thirdly, the use of these materials in information and communication technology applications will require the active structure to be protected from the ambient by capping. Optical techniques offer the possibility of characterising the active nanostructure through the capping layers. First results from second harmonic generation and reflectance anisotropy spectroscopy studies of low-dimensional In nanostructures grown on Si surfaces are promising, and it is clear that Si(111)-4 Â 1-In is an important model system against which surface and interface optical characterisation techniques should be tested.

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Section: The Si(111)-4 â 1-in Structurementioning

confidence: 99%

Optical Response of Low-Dimensional In Nanostructures Grown by Self-Assembly on Si Surfaces

McGilp

2001

phys. stat. sol. (a)

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“…The GA has since also been applied to several unknown structures such as In on Si(lll) 4 × 1 (Collazo-Davila, Marks, Nishii & Tanishiro, 1997), TiO2(100) 1 × 3 (Landree, Marks, Zschack & Gilmore, 1997) and Au on Si(lll) 6 × 6 (Marks, Grozea, Feidenhans'l, Nielsen & Johnson, 1997) with equally encouraging results.…”

Section: Discussionmentioning

confidence: 99%

Multi-Solution Genetic Algorithm Approach to Surface Structure Determination Using Direct Methods

Landree¹,

Collazo-Davila²,

Marks³

1997

Acta Crystallogr Sect B

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“…This system was characterized structurally [5][6][7][8][9] and electronically [10,11]. In these works it was found that the In atoms were organized into linear chains of atoms, and that the electronic properties appeared to be highly anisotropic, with metallic behavior indicated by band crossings of E F along the chains.…”

Section: X1 Reconstruction: 1deg [4]mentioning

confidence: 99%

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

et al. 2000

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We present angle-resolved photoemission measurements for ultrathin In films on Si(111). Depending on the coverage, this system self-organizes into a metallic monolayer with either 4x1 or !7x!3 symmetry relative to the substrate. Electronically, they behave like ideal one-and twodimensional electron gases (1DEG and 2DEG), respectively. The 4x1 system has atomic chains of In whose energy bands disperse only parallel to the chains, while for the !7x!3 system, the dominant reciprocal space features (in both diffraction and bandstructure) resemble a pseudosquare lattice with only weaker secondary features relating to the !7x!3 periodicity. In both materials the electrons show coupling to the structure. The 1DEG couples strongly to phonons of momentum 2k F , leading to an 8x"2" Peierls-like insulating ground state. The 2DEG appears to be partially stabilized by electron gap formation at the !7x!3 zone boundary.

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ATOMIC STRUCTURE OF THE In ON Si(111)(4 × 1) SURFACE

Cited by 42 publications

References 0 publications

Optical Response of Low-Dimensional In Nanostructures Grown by Self-Assembly on Si Surfaces

Optical Response of Low-Dimensional In Nanostructures Grown by Self-Assembly on Si Surfaces

Multi-Solution Genetic Algorithm Approach to Surface Structure Determination Using Direct Methods

In/Si(111): Self-Assembled One and Two-Dimensional Electron Gases

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