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2006
DOI: 10.1103/physrevb.74.195434
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Atomic structure of screw dislocations intersecting theAu(111)surface: A combined scanning tunneling microscopy and molecular dynamics study

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Cited by 19 publications
(13 citation statements)
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References 35 publications
(34 reference statements)
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“…The intrinsic stacking fault likely extends to the lower left, visible as the brighter ribbon in STM. Note that similar STM images of the edge dislocations on the Au(111) surface were published in the work by Engbaek et al [33]. Thus, at our experimental conditions, implantation of argon atoms in subsurface of Au(111) gives rise to the formation of edge dislocations.…”
Section: Origin Of the Orderingsupporting
confidence: 60%
“…The intrinsic stacking fault likely extends to the lower left, visible as the brighter ribbon in STM. Note that similar STM images of the edge dislocations on the Au(111) surface were published in the work by Engbaek et al [33]. Thus, at our experimental conditions, implantation of argon atoms in subsurface of Au(111) gives rise to the formation of edge dislocations.…”
Section: Origin Of the Orderingsupporting
confidence: 60%
“…At the surface, edge dislocations split into two partial dislocations that elastically repel each other and form a stacking fault ribbon that appear like a short step segment high one third of the full step height. These defects have been seldomly seen on single crystal Au(111) surface [21]. More particularly, on the present sample these stacking fault ribbons are commonly arranged in sequences, like shown in Fig.…”
Section: Au(111) With Unidirectional Reconstructionsupporting
confidence: 54%
“…Another type of atomic steps is caused by the dislocations emerging at the free surface [4,5], which may be inherited from a substrate under epitaxial growth or introduced due to the relaxation of external mechanical stresses. These latter steps are called slip traces as long as their directions are characteristic of the gliding of dislocations in their crystallographic planes [6][7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
“…The formation of step-terraced morphology, step bunching and anti-bunching phenomena induced by the interaction of vicinal steps, electric current or adsorbates were studied on various semiconductor and metal surfaces [2,3,[13][14][15]. On the other hand, scanning probe microscopy of dislocation-induced slip trace structures at free surfaces proved to be an effective tool for studying various phenomena associated with dislocation behaviour in crystals, such as partial splitting of screw dislocations [5,7], as well as plastic relaxation processes at nanoscale level under nanoindentation [8][9][10][11]. Misfit dislocations and dislocation-induced atomic steps are responsible for the formation of the well-known 'cross-hatched' relief patterns of mesoscopic heights on the surfaces of epitaxial films grown on the mismatched substrates, which can be seen by an optical microscope or even with a naked eye [16].…”
Section: Introductionmentioning
confidence: 99%