Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity

Liliental‐Weber, Z.; Tomaszewicz, T.; Zakharov, Dmitri N.; Jasiński, Jacek B.; O’Keefe, Michael A.

doi:10.1103/physrevlett.93.206102

Cited by 45 publications

(25 citation statements)

References 21 publications

(14 reference statements)

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“…vs. V "Mott-Schottky" plots) is indicative of the net charge type (donor or acceptor) beneath the surface inversion/accumulation layer [10,11]. This "turnover" occurs at lower applied bias shown to produce donors and reduce the free hole concentration; this result has been attributed to the formation of compensating defect complexes (such as Mg-V N ) [32,33] and pyramidal inversion domains [34,35]. TEM studies of Mg-doped InN, InGaN, and GaN have shown that high levels of Mg result in large densities of planar extended defects, which could also be contributing to the n-type conductivity of overdoped films [36][37][38][39].…”

Section: Electrical and Thermoelectric Measurements A Resultsmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a "window" from ca. 3 × 10 17 to 1 × 10 19 cm −3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coefficient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ∼70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge. * Corresponding author: JWAger@lbl.gov

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Section: Electrical and Thermoelectric Measurements A Resultsmentioning

confidence: 99%

Hole transport and photoluminescence in Mg-doped InN

Miller

Ager

Smith

et al. 2010

Journal of Applied Physics

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“…1,3 According to energy dispersive x-ray spectroscopy and electron energy loss spectroscopy, Mg is incorporated into the top and side facets of these defects. 1,5 The experimental observation that the Mg concentration of 2 Â 10 19 cm À3 , at which pyramidal inversion domains start to form, coincides with the concentration beyond which the free carrier concentration drops led several authors 1,2,6 to conclude that incorporation of Mg in form of Mg 3 N 2 into these defects could explain this drop. As an alternative explanation for the reduced free carrier concentration, compensation of the Mg acceptor by, e.g., nitrogen vacancies (V N ) has been put forward.…”

Section: Pyramidal Inversion Domain Boundaries Revisitedmentioning

confidence: 96%

Pyramidal inversion domain boundaries revisited

Remmele

Albrecht

Irmscher

et al. 2011

Applied Physics Letters

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The structure of pyramidal inversion domain boundaries in GaN:Mg was investigated by aberration corrected transmission electron microscopy. The analysis shows the upper (0001) boundary to consist of a single Mg layer inserted between polarity inverted GaN layers in an abcab stacking. The Mg bound in these defects is at least one order of magnitude lower than the chemical Mg concentration. Temperature dependent Hall effect measurements show that up to 27% of the Mg acceptors is electrically compensated.

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“…These defects have been studied in the literature and different models were suggested to explain their nature, all of them comprise an enrichment of Mg in the boundary or inside the PDs. Hansen et al [1] stated that the PDs are antibixbyite (Mg 3 N 2 ) precipitates, whereas Liliental-Weber et al [2][3][4][5] observed cavities inside PDs and assert that in the PDs the boundaries are decorated by Mg and covered by GaN of reversed polarity. Vennéguès et al [6] studied Mg doped bulk GaN grown by high-pressure, high-temperature method exhibiting rather large PDs with basal plane diameters of ∼100 nm.…”

Section: Introductionmentioning

confidence: 99%

Structural analysis of pyramidal defects in Mg‐doped GaN

Pretorius

Schowalter

Daneu

et al. 2006

Phys. Status Solidi (c)

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Pyramidal defects in GaN:Mg grown by metalorganic vapour phase epitaxy are studied by high resolution transmission electron microscopy, energy dispersive X-ray analysis and scanning transmission electron microscopy. High resolution transmission electron microscopy images were simulated using the multislice approach in order to analyse the basal plane of the pyramidal defects. The simulated images were compared quantitatively with the experimental images. Two structural models for the basal plane inversion domain boundary containing antibixbyite-type layers are presented which show the best observed agreement with the experimentally found inversion domain boundary. Nevertheless, both models still do not match the experimental images satisfactorily, indicating that some other structure than antibixbyite is present at the boundary.

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Atomic Structure of Defects in GaN:Mg Grown with Ga Polarity

Cited by 45 publications

References 21 publications

Hole transport and photoluminescence in Mg-doped InN

Hole transport and photoluminescence in Mg-doped InN

Pyramidal inversion domain boundaries revisited

Structural analysis of pyramidal defects in Mg‐doped GaN

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