Abstract:Silicon–germanium (SiGe) alloy is a new semiconductor material of great interest in thermoelectric devices, optoelectronic devices, infrared detectors, and semiconductor industry. In the present work, molecular dynamics simulation was conducted to investigate the deformation behavior in nano-scratching of SiGe alloy. The effect of scratching direction and Ge composition on material removal mechanism was discussed, aiming to understand the nanoscale deformation mechanism of SiGe alloy. The simulation results in… Show more
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