Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Hou, An Yuan; Ting, Yi Hsin; Tai, Kuo Lun; Huang, Chih Yang; Lu, Kuo Chang; Wu, Wen‐Wei

doi:10.1016/j.apsusc.2020.148129

Cited by 13 publications

(6 citation statements)

References 54 publications

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“…The growth of thin films with only the NiSi phase is very important becaus the mixed film of NiSi and high resistivity the Ni2Si phase may lead to higher resistance induced loss of the cells. After annealing at different temperatures, Ni and Si form different phases, such as Ni 2 Si, NiSi, and NiSi 2 [30,31]. Among the different nickel silicide phases formed by the seed layer, the NiSi phase is the lowest resistivity phase in the silicide phase.…”

Section: Resultsmentioning

confidence: 99%

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Wang,

Liu,

Chen

et al. 2024

Materials

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Due to the lower cost compared to screen-printed silver contacts, the Ni/Cu/Ag contacts formed by plating have been continuously studied as a potential metallization technology for solar cells. To address the adhesion issue of backside grid lines in electroplated n-Tunnel Oxide Passivating Contacts (n-TOPCon) solar cells and reduce ohmic contact, we propose a novel approach of adding a Ni/Si alloy seed layer between the Ni and Si layers. The metal nickel layer is deposited on the backside of the solar cells using electron beam evaporation, and excess nickel is removed by H2SO4:H2O2 etchant under annealing conditions of 300–425 °C to form a seed layer. The adhesion strength increased by more than 0.5 N mm−1 and the contact resistance dropped by 0.5 mΩ cm2 in comparison to the traditional direct plating Ni/Cu/Ag method. This is because the resulting Ni/Si alloy has outstanding electrical conductivity, and the produced Ni/Si alloy has higher adhesion over direct contact between the nickel–silicon interface, as well as enhanced surface roughness. The results showed that at an annealing temperature of 375 °C, the main compound formed was NiSi, with a contact resistance of 1 mΩ cm−2 and a maximum gate line adhesion of 2.7 N mm−1. This method proposes a new technical solution for cost reduction and efficiency improvement of n-TOPCon solar cells.

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Section: Resultsmentioning

confidence: 99%

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Wang,

Liu,

Chen

et al. 2024

Materials

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“…A number of works about self-assembled epitaxial Ni silicide have been published [ 41 – 46 ], and some works pointed out that the Ni 2 Si phase formed first, followed by NiSi and NiSi 2 after annealing [ 47 – 49 ]. Generally, NiSi 2 forms above 600 °C [ 42 – 45 48 ]. Therefore, the self-assembled epitaxial line structures in this work are supposed to be NiSi 2 .…”

Section: Resultsmentioning

confidence: 99%

“…Au/Si phase separation occurs during cooling [ 3 , 55 ], and Ni silicide may remain stable down to room temperature [ 41 – 46 ], finally forming particles with two contrasts. Besides, Ni may also diffuse into the Si substrate, leading to the formation of the Ni silicide, and a cross-sectional view of Ni silicide is given in Figure 4c based on reported works [ 44 , 48 , 56 ]. The elongation process of the symmetric NiSi 2 clusters is mainly governed by the growth kinetics [ 44 , 57 – 58 ].…”

Section: Resultsmentioning

confidence: 99%

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Li¹,

Wan²,

Wang³

et al. 2023

Beilstein J. Nanotechnol.

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This work reports the formation of nanoflowers after annealing of Au/Ni bilayers deposited on SiO2/Si substrates. The cores of the nanoflowers consist of segregated Ni silicide and Au parts and are surrounded by SiOx branches. The SiO2 decomposition is activated at 1050 °C in a reducing atmosphere, and it can be enhanced more by Au compared to Ni. SiO gas from the decomposition of SiO2 and the active oxidation of Si is the source of Si for the growth of the SiOx branches of the nanoflowers. The concentration of SiO gas around the decomposition cavities is inhomogeneously distributed. Closer to the cavity border, the concentration of the Si sources is higher, and SiOx branches grow faster. Hence, nanoflowers present shorter and shorter branches as they are getting away from the border. However, such inhomogeneous SiO gas concentration is weakened in the sample with the highest Au concentration due to the strong ability of Au to enhance SiO2 decomposition, and nanoflowers with less difference in their branches can be observed across the whole sample.

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“…The total oil resources in the basin are about 8.6 billion tons, ranking fourth in the China . − After years of exploration and research, it has been found that the Triassic Yanchang Formation reservoirs in Dingbian, Jiyuan, Huanxian, Ansai, and other areas in the basin contain abundant low-resistivity oil and gas resources. , The Yanchang Formation reservoir has complex pore structure, low permeability, and the growth of low-resistivity oil pays, which has brought great obstacles to exploration and development . − In 2019, Zhidan Oil Production plant found Chang 6 1 low-resistivity oil pay with a resistivity of 6–12 Ω·m in some wells such as Well F854 in Zhidan District, while the resistivity of other pays was mostly 25–30 Ω·m, which failed to produce oil in the test or failed to meet the industrial oil flow standard.…”

Section: Introductionmentioning

confidence: 99%

Genetic Mechanisms and Multiparameter Logging Identification of Low-Resistivity Oil Pay: A Case Study of the Triassic Chang 6 Member, Zhidan Area, Ordos Basin, China

2023

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Low-resistivity pay has been found throughout the world. The causes and logging responses of low-resistivity reservoirs are complex and variable. The weak variations in resistivity between the oil pay and the adjacent water pay makes it difficult to identify fluids by resistivity log analysis, which reduces the overall exploration benefit of the oil field. Therefore, it is very important to study the genesis and logging identification technology of the low-resistivity oil pay. In this paper, we first analyzed the core results such as X-ray diffraction, scanning electron microscopy, mercury intrusion, phase permeability, nuclear magnetic resonance, physical properties, electric petrophysical experiment, micro-CT, rock wettability, etc. The results show that: ① the development of low-resistivity oil pays in the studied area is mainly controlled by irreducible water saturation. The complicated pore structure, high gamma ray sandstone, and rock hydrophilicity are the factors that lead to the increase of irreducible water saturation. ② The salinity of formation water and the invasion of drilling fluid also have a certain influence on the variation of reservoir resistivity. ③ In order to magnify the difference between oil and water, sensitive parameters of logging response are extracted according to the controlling factors of low- resistivity reservoir. Then, AC-R ILD, SP-PSP, GR*GR*ΔSP-RILD, and (R ILM-R ILD)/R ILDR ILD cross-plots, some overlap method, and movable water analysis are used to identify low-resistivity oil pays synthetically. In the case study, the comprehensive application of the above identification method can effectively improve the accuracy of fluid recognition step by step. It provides reference for identifying more low-resistivity reservoirs with similar geological conditions.

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Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Cited by 13 publications

References 54 publications

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

Genetic Mechanisms and Multiparameter Logging Identification of Low-Resistivity Oil Pay: A Case Study of the Triassic Chang 6 Member, Zhidan Area, Ordos Basin, China

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Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Cited by 13 publications

References 54 publications

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiOx branches

Genetic Mechanisms and Multiparameter Logging Identification of Low-Resistivity Oil Pay: A Case Study of the Triassic Chang 6 Member, Zhidan Area, Ordos Basin, China

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Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches