2006
DOI: 10.1016/j.jnucmat.2006.02.030
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Atomic scale modelling of the primary damage state of irradiated fcc and bcc nanocrystalline metals

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Cited by 90 publications
(39 citation statements)
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References 57 publications
(96 reference statements)
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“…Electronic structure calculations and atomistic simulations in bicrystalline and nanocrystalline structures have provided a fundamental understanding of nanoscale details regarding point defect behavior at grain boundaries in polycrystalline materials [23][24][25][26][27][28][29][30][31][32] as well as interfaces in nano-layered metal composites [33][34][35] . Previous work has used atomistic simulations to examine the interaction of point defect and point defect clusters with grain boundaries in 2D columnar and 3D nanocrystalline metals.…”
Section: Introductionmentioning
confidence: 99%
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“…Electronic structure calculations and atomistic simulations in bicrystalline and nanocrystalline structures have provided a fundamental understanding of nanoscale details regarding point defect behavior at grain boundaries in polycrystalline materials [23][24][25][26][27][28][29][30][31][32] as well as interfaces in nano-layered metal composites [33][34][35] . Previous work has used atomistic simulations to examine the interaction of point defect and point defect clusters with grain boundaries in 2D columnar and 3D nanocrystalline metals.…”
Section: Introductionmentioning
confidence: 99%
“…Previous work has used atomistic simulations to examine the interaction of point defect and point defect clusters with grain boundaries in 2D columnar and 3D nanocrystalline metals. For example, Samaras and colleagues [24][25][26][27] have used molecular dynamics (MD) studies of nanocrystalline metals to show that grain boundaries act as sinks for self-interstitial atoms after nearby cascade events, which also leads to the formation of stacking fault tetrahedron in the grain interior for fcc Ni. Millett et al used molecular dynamics simulations of 2D columnar nanocrystalline Mo to investigate the ability of grain boundaries to act as both a sink for point defects and a source for vacancies at high homologous temperatures (T > 0.75T m ) 28,29 .…”
Section: Introductionmentioning
confidence: 99%
“…They found that SIAs have a larger energetic driving force for binding to grain boundaries than the vacancies. Li et al [27,28] reported similar results for the segregation of SIAs and vacancies in Fe, Mo, and W. In addition, MD simulations revealed that SIAs can be absorbed by the grain boundary at the early stage of radiation damage, whereas the vacancies were observed to be less mobile at the nanosecond timescale of the MD simulations [3,24,[29][30][31][32]. While the role of the grain boundary as a defect sink has been extensively investigated in the previous research works, some recent studies have been focusing on the radiationinduced modification of GB structures and their influence on GB motion.…”
Section: Introductionmentioning
confidence: 67%
“…Firstly, SIAs migrate due to their high mobility and get trapped at GBs. At low temperature, the process ends at this stage, resulting in a higher vacancy density in nanostractured materials as compared to monocrystalline ones [159,183].…”
Section: Discussionmentioning
confidence: 99%
“…Refs. [158][159][160] indicate that SIAs migrate towards GBs, whilst vacancies remain in the interior of the grains. The temperature may play an important role regarding FP annihilation at the GBs, as vacancies start to diffuse at higher temperature than SIAs [46][47][48].…”
Section: Introductionmentioning
confidence: 99%