Atomic-Scale Interfacial Magnetism in Fe/Graphene Heterojunction

Liu, W. Q.; Wang, W. Y.; Wang, J. J.; Wang, F. Q.; Lu, Cong; Jin, Feng; Zhang, A.; Zhang, Q. M.; Laan, G. van der; Xu, Yongbing; Li, Q. X.; Zhang, R.

doi:10.1038/srep11911

Cited by 37 publications

(25 citation statements)

References 46 publications

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“…In terms of the occupation sites, the best agreement between experiment and theory of the Fe/graphene heterojunction points to a coexistence of two types of domains, namely top-fcc and bridge-top domains [397]. Table 4 The experimentally measured and calculated magnetic moments of Fe in various graphenebased configurations in comparison with those on InAs and GaAs [395].…”

Section: òGraphene At the Bottomómentioning

confidence: 99%

“…From the fundamental science perspective, the FM/graphene hybrid interface presents a promising platform for studying atomic-scale magnetism and magnetic anisotropy in lowdimension. Liu et al have recently carried out a systematic study on the interfacial magnetism in Fe/graphene heterojunction using a combined method of XMCD and DFT calculations [395]. The experiment has been performed using a specially designed FM1/FM2/graphene structure that to a large extent restores the realistic case of the proposed graphene-based transistors [83].…”

Section: òGraphene At the Bottomómentioning

confidence: 99%

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Hybrid spintronic materials: Growth, structure and properties

Liu

Wong

2019

Progress in Materials Science

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Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or in addition to charge-only-based physical phenomena. Since the discovery of giant magnetoresistance (GMR) effect in metallic multilayers, the first-generation spintronics has generated huge impact to the mass data storage industries. The second-generation spintronics, on the other hand, focuses on the integration of the magnetic and semiconductor materials and so to add new capabilities to the electronic devices. While spin phenomena have long been investigated within the context of conventional ferromagnetic materials, the study of spin generation, relaxation, and spin-orbit coupling in non-magnetic materials took off only recently with the advent of hybrid spintronics and it is here many novel materials and architectures can find their greatest potentials in both science and technology. This article reviews recent progress of the research on a selection of hybrid spintronic systems including those based on ferromagnetic metal (FM) and alloys, half-metallic materials, and twodimensional (2D) materials. FM and alloys have spontaneous magnetization and usually high Curie temperature (Tc), half-metallic materials possess high spin polarization near the Fermi level (EF), and the 2D materials have unique band structures such as the Fermi Dirac cone and valley degree of freedom of the charge carriers. Enormous progress has been achieved in terms of synthesising the epitaxial hybrid spintronic materials and revealing their new structures and properties emerging from the atomic dimensions and the hetero-interfaces. Apart from the group-IV, III-V, and II-VI semiconductors and their nanostructures, spin injection and detection with 2D materials such as graphene, transition-metal dichalcogenides (TMDs) and topological insulators (TIs) has become a new trend and a particularly interesting topic due to either the long spin lifetime or strong spin-orbit coupling induced spinmomentum locking, which potentially leads to dissipationless electronic transport.

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Section: òGraphene At the Bottomómentioning

confidence: 99%

Section: òGraphene At the Bottomómentioning

confidence: 99%

Hybrid spintronic materials: Growth, structure and properties

Liu

Wong

2019

Progress in Materials Science

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“…[102] The magnetic moment of monolayer Fe is reduced but still sizable when epitaxially deposited on graphene, and this in turn induces a spin polarization in the carbon atoms. [103] The graphene-based FET has been demonstrated in back gated devices on highly doped Si, [104] and the conductance of the top surface of such structure can be modulated via gas exposure and top-back dual gates. [102] The spin valve effect was also successfully demonstrated in NiFe/graphene/NiFe vertical structures and the signal is enhanced when the number of graphene layers is doubled.…”

Section: Magnetic Graphene and Transition Metal Dichalcogenidesmentioning

confidence: 99%

Magnetic two-dimensional systems

Liu

2016

Current Opinion in Solid State and Materials Science

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Two-dimensional (2D) systems have considerably strengthened their position as one of the premier candidates to become the key material for the proposed spintronics technology, in which computational logic, communications, and information storage are all processed by the electron spin. In this article, some of most representative 2D materials including ferromagnetic metals (FMs) and diluted magnetic semiconductor (DMSs) in their thin film form, magnetic topological insulators (TIs), magnetic graphene and magnetic transition metal dichalcogenides (TMDs) are reviewed for their recent research progresses. FM thin films have spontaneous magnetization and usually high Curie temperature (T c), though this can be strongly altered when bonded with semiconductors (SCs). DMS and magnetic TIs have the advantage of easy integration with the existing SC-based technologies, but less robust magnetism. Magnetic ordering in graphene and TMDs are even more fragile and limited to cryogenic temperatures so far, but they particularly interesting topics due to the desired long spin lifetime as well as the outstanding mechanical and optical properties of these materials.

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“…Moreover, the interfacial effects between FM transitional metals (TMs) and C-based materials have attracted considerable attention. The magnetic proximity effects in transitional metal(TM)/carbon systems have also been evidenced by x-ray magnetic circular dichroism (XMCD) [6][7][8] , ultraviolet-visible (UV-VIS) magnetic circular dichroism MCD 9,10 , and polarized neutron reflectivity 8 . The origin of both the EB phenomenon and the magnetic proximity effect is an interlayer exchange coupling 11 .…”

mentioning

confidence: 99%

Exchange bias in graphitic C/Co composites

Hsu

Chang

Chin

et al. 2017

Carbon

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The exchange bias (EB) effect, which is the shift of the hysteresis loop of a ferromagnet in direct contact with an antiferromagnet, is highly advantageous for the development of spintronics applications. Carbon (C) has been considered as a potential material in next generation electronics production as well as spintronics devices beyond silicon.However, the EB effect has never been reported in C structures. Here we show experimental evidence for an EB in C/Co composites. We apply suitable annealing to induce graphitization by metal contact and thus induce EB at the interfacial antiferromagnetic coupling between Co and local graphene multilayers in a C matrix.The present work makes an advance in this field, as it reports an unexpected EB effect of a C based material.

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Atomic-Scale Interfacial Magnetism in Fe/Graphene Heterojunction

Cited by 37 publications

References 46 publications

Hybrid spintronic materials: Growth, structure and properties

Hybrid spintronic materials: Growth, structure and properties

Magnetic two-dimensional systems

Exchange bias in graphitic C/Co composites

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