Atomic scale images of acceptors in III-V semiconductors

Loth, Sebastian

doi:10.17875/gup2008-98

Cited by 2 publications

(1 citation statement)

References 108 publications

(152 reference statements)

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“…We use a value of +0.6 V, assuming work functions of 5.1 and 4.5 eV for the anatase surface and the tip, respectively. [35][36][37] The factor 0.94 in eqn. ( 1) is a correction for the TIBBwe estimate that 4 − 8% of the applied bias penetrates into the sample.…”

Section: Electric Fieldmentioning

confidence: 99%

Aggregation and electronically induced migration of oxygen vacancies inTiO2anatase

2015

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The influence of the electric field and electric current on the behavior of oxygen vacancies (VOs) in TiO2 anatase was investigated with Scanning Tunneling Microscopy (STM). At the anatase (101) surface VOs are not stable; they migrate into the bulk at temperatures above 200 K. Scanning a clean anatase (101) surface at a sample bias greater than ≈+4.3 V results in surface VOs in the scanned area, suggesting that subsurface VOs migrate back to the surface. To test this hypothesis, surface VOs were first created through bombardment with energetic electrons. The sample was then mildly annealed, which caused the VOs to move to the subsurface region, where they formed vacancy clusters. These VO clusters have various, distinct shapes. Scanning VO clusters with a high STM bias reproducibly converts them back into groupings of surface VO, with a configuration that is characteristic for each type of cluster. The dependence of the subsurface-to-surface VO migration on the applied STM bias voltage, tunneling current, and sample temperature was investigated systematically. The results point towards a key role of energetic, 'hot' electrons in this process. The findings are closely related to the memristive behavior of oxides and oxygen diffusion in solid-oxide membranes.

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Section: Electric Fieldmentioning

confidence: 99%

Aggregation and electronically induced migration of oxygen vacancies inTiO2anatase

2015

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Transport through a single donor in p-type silicon

Miwa

Mol

Salfi

et al. 2013

Applied Physics Letters

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Single phosphorus donors in silicon are promising candidates as qubits in the solid state. Here, we present low temperature scanning probe microscopy and spectroscopy measurements of individual phosphorus dopants deliberately placed in p-type silicon $1 nm below the surface. The ability to image individual dopants combined with scanning tunnelling spectroscopy allows us to directly study the transport mechanism through the donor. We show that for a single P donor, transport is dominated by a minority carrier recombination process with the surrounding p-type matrix. The understanding gained will underpin future studies of atomically precise mapping of donor-donor interactions in silicon. V C 2013 AIP Publishing LLC. [http://dx

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Atomic scale images of acceptors in III-V semiconductors

Cited by 2 publications

References 108 publications

Aggregation and electronically induced migration of oxygen vacancies inTiO2anatase

Aggregation and electronically induced migration of oxygen vacancies inTiO2anatase

Transport through a single donor in p-type silicon

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