Atomic-scale characterization of occurring phenomena during hot nanometric cutting of single crystal 3C–SiC

Abstract

Nanometric cutting of single crystal 3C–SiC on the three principal crystal orientations at various cutting temperatures spanning from 300 K to 3000 K was investigated by the use of molecular dynamics (MD) simulation.

Temperature-dependent nanoindentation response of materials

“…1, an increase in temperature leads to increased activities of phonons (in crystalline insulators and some semi-conductors), electrons (in metal and some semi-conductors), propagons, diffusons, and locons (in amorphous non-metallic materials), [11,12] which in turn contribute to additional atomic displacements, an increase in the average interatomic distance, and a decrease in the restoring forces due to thermal expansion. [13][14][15][16] While increasing the dislocation mobility, a higher temperature lowers the minimum stresses required for homogeneous dislocation nucleation, dislocation gliding in a lattice, and breaking dislocation locks. As a result, thermal softening improves the plasticity of the material.…”

Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes

“…Figure 3 shows the radial distributions of the maximum temperature after Xe-ion strikes at different biases, obtained from the MD simulations. Without an applied bias, the lattice temperature rises slightly, but remains below the SiC melting temperature (3500-4000K) [11]. Also at 50V bias, the lattice temperatures obtained from both TCAD and MD simulations are relatively low.…”

“…The Erhart-Albe SiC potential [10] is used to describe the Si-C interactions. This potential predicts a melting point between 3500-4000 K [11], compared to the experimental value of 3000 K [12]. In order to simulate the effect of energetic heavy ions in classical MD simulations (where electrons are not present explicitly), the heat added to the lattice due to the electronic excitations is estimated utilizing the inelastic thermal spike model [13].…”

A Review on Micro- and Nanoscratching/Tribology at High Temperatures: Instrumentation and Experimentation

“…The micro-/nanoscratching technique can also be adopted to provide extensive insight into the mechanical response and plastic deformation of materials. This method, unlike indentation, is a deviatoric stress-dominative process, carrying a noticeable component of shear, which leads to initiation of multiple plasticity mechanisms which may be different from those during indentation (Ref [5][6][7][8][9][10].…”