Atomic-Scale Characterization of Graphene Grown on Copper (100) Single Crystals

Rasool, Haider I.; Song, Emil B.; Mecklenburg, Matthew; Regan, B. C.; Wang, Kang L.; Weiller, Bruce H.; Gimzewski, James K.

doi:10.1021/ja200245p

Cited by 151 publications

(156 citation statements)

References 42 publications

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“…Copper with a 100 orientation can produce a distinctive linear moirépattern in overlying graphene. 47,48 In characterization experiments of the SLG−poly Cu substrates, we identified a linear moireṕ attern similar to that previously observed on single-crystal Cu(100). We also find a second coexisting moirépattern oriented nearly perpendicular to the first.…”

Section: Resultssupporting

confidence: 78%

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

et al. 2015

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The behavior of small molecules on a surface depends critically on both molecule−substrate and intermolecular interactions. We present here a detailed comparative investigation of 1,3,5-benzene tricarboxylic acid (trimesic acid, TMA) on two different surfaces: highly oriented pyrolytic graphite (HOPG) and single-layer graphene (SLG) grown on a polycrystalline Cu foil. On the basis of high-resolution scanning tunnelling microscopy (STM) images, we show that the epitaxy matrix for the hexagonal TMA chicken wire phase is identical on these two surfaces, and, using density functional theory (DFT) with a non-local van der Waals correlation contribution, we identify the most energetically favorable adsorption geometries. Simulated STM images based on these calculations suggest that the TMA lattice can stably adsorb on sites other than those identified to maximize binding interactions with the substrate. This is consistent with our net energy calculations that suggest that intermolecular interactions (TMA−TMA dimer bonding) are dominant over TMA−substrate interactions in stabilizing the system. STM images demonstrate the robustness of the TMA films on SLG, where the molecular network extends across the variable topography of the SLG substrates and remains intact after rinsing and drying the films. These results help to elucidate molecular behavior on SLG and suggest significant similarities between adsorption on HOPG and SLG.

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Section: Resultssupporting

confidence: 78%

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

et al. 2015

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“…2 (a) are the graphene nucleation sites. Similar growth structures have been observed in STM measurements of graphene on Cu(100) 21 . Figs …”

Section: A Leem Of As-grown Filmssupporting

confidence: 82%

“…The arcs occur because the graphene has a large range of in-plane orientations. In addition, the arcs are broadened in the radial direction, a result of the roughened surface topology, as for Cu(111) and STM measurements 21 . Reducing the integration area for the LEED patterns down to 2 microns does not completely eliminate the azimuthal disorder observed in the LEED patterns for both Cu(100) and Cu(111).…”

Section: A Leem Of As-grown Filmsmentioning

confidence: 77%

Electronic structure of graphene on single-crystal copper substrates

et al. 2011

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The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of ∼ -0.3 eV and the opening of a ∼ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a (superstructure. The effect of this intercalation on the graphene π bands is to increase the offset of the Dirac crossing (∼ -0.6 eV) and enlarge the gap (∼ 350 meV). No such effect is observed for the graphene on Cu (111) sample, with the surface state at Γ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed, as for 1 monolayer of Ag on Cu(111).

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“…atomic steps and vertices), surface defects (e.g. dislocations and atomic protrusions) [10,11] and even amorphous regions on Cu [12]. These results present additional evidence to support that the interaction between graphene and Cu surface is weak.…”

Section: Correlation Between Graphene Growth and Surface Morphology Omentioning

confidence: 52%

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

Ren

Dong

et al. 2012

Chin. Sci. Bull.

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Recently, chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene. In this paper, we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth of graphene in future, including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders. Graphene, a novel two-dimensional crystal, holds great promise in a wide range of applications such as electronics, transparent electrodes, energy storage, and functional composites due to its excellent properties such as giant carrier mobility, superior thermal conductivity, high transparency and good chemical stability [1,2]. Among all the developed synthesis methods, chemical vapor deposition (CVD) has been attracting increased interests for growing large-area highquality graphene film. In 2009, Li et al.[3] first realized the CVD growth of centimeter-sized graphene films dominated by monolayers (about 95%) by using polycrystalline copper (Cu) foil as a substrate. These graphene films show high quality with a carrier mobility up to 4050 cm 2 V 1 s 1 . In contrast to the CVD growth of graphene on nickel (Ni), which follows a carbon segregation/precipitation mechanism, graphene grown on Cu is superior in both the controllability and uniformity of the number of layers due to the self-limiting surface adsorption growth mechanism [4]. Moreover, it has a great potential to grow very large films.For example, Bae et al. [5] have realized the roll-to-toll production of 30 inch monolayer predominated graphene films. However, there is a large variation in the quality of graphene on Cu prepared by different groups with the carrier mobility varying from several hundreds to several thousands of cm 2 V 1 s 1 . These values are far below the theoretical limit (~10 6 cm 2 V 1 s 1 ), and merely comparable to those of the commercial silicon materials. Meanwhile, it is necessary to develop the CVD process for growing highquality few-and multi-layer graphene since monolayer graphene is unable to satisfy the requirements of certain applications. In addition, it still remains a great challenge to realize the nondestructive and efficient transfer of large-area high-quality CVD grown graphene. Extensive efforts have been devoted to addressing the above issues in the past two years. In this paper, we will first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on Cu, and then focus on the recent progress on the quality improvement, number of layers control and transfer-free growth of graphene. In the end, we attempt to analyze the possible development of CVD growth

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Atomic-Scale Characterization of Graphene Grown on Copper (100) Single Crystals

Cited by 151 publications

References 42 publications

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene

Electronic structure of graphene on single-crystal copper substrates

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

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