Atomic resolution imaging of<i>in situ</i>InAs nanowire dissolution at elevated temperature

Pennington, Robert S.; Jinschek, Joerg R.; Wagner, Jakob Birkedal; Boothroyd, Chris; Dunin-Borkowski, Rafal E.

doi:10.1088/1742-6596/209/1/012013

Cited by 11 publications

(18 citation statements)

References 4 publications

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“…17 Moreover, carbon exhibits high deformability and strength and thus provides an excellent shielding of the encapsulated materials. 17 The presence of the amorphous carbon coating has also been characterized previously by Pennington et al 18 The experiment was performed inside an FEI Tecnai F30 field-emission gun TEM operated at 300 kV. A sample containing many InAs NWs was placed into the electrically grounded Nanofactory TEM-STM platform.…”

mentioning

confidence: 99%

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires

Wang

Huang³

et al. 2013

Nano Lett.

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In situ high-resolution transmission electron microscopy revealed the precipitation of the zinc-blende (ZB) structure InAs at the liquid/solid interface or liquid/solid/amorphous carbon triple point at high temperature. Subsequent to its precipitation, detailed analysis demonstrates unique solid to solid wurtzite (WZ) to ZB phase transition through gliding of sharp steps with Shockley partial dislocations. The most intriguing phenomenon was that each step is 6 {111} atomic layers high and the step migrated without any mechanical stress applied. We believe that this is the first direct in situ observation of WZ-ZB transition in semiconductor nanowires. A model was proposed in which three Shockley partial dislocations collectively glide on every two {0001} planes (corresponds to six atomic planes in an unit). The collective glide mechanism does not need any applied shear stress.

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confidence: 99%

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires

Wang

Huang³

et al. 2013

Nano Lett.

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“…Whereas, the first publications on SLV used the term “impurity” and speculated that it acted either as a catalyst or as a sink for Si , recent publications denote its role as a catalyst . Pinion et al developed from a series of experiments an energy diagram for the reverse mechanism, the VLS mechanism, resulting in a simple two step catalytic energy landscape.…”

Section: Resultsmentioning

confidence: 99%

“…Usually, halogen‐containing etching gases such as

{CBr}_{4}

, HCl ,

H_{2}

/HBr, and

H_{2} / {PBr}_{3}

were used. Interestingly, Hudak et al and Pennington et al observed the SLV etching of

{SnO}_{2}

and InAs nanowires, respectively, under high temperature conditions in situ employing the high vacuum of transmission electron microscopy. GaN was similarly observed to etch by a self‐catalytic SLV mechanism .…”

Section: Introductionmentioning

confidence: 99%

Solid–liquid–vapor etching of silicon nanostructures using hydrogen plasma

Steinbach

Kazemi

Strehle

2016

Physica Status Solidi (a)

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Contrary to the well established vapor-liquid-solid (VLS) mechanism widely used for the metal-catalyzed bottom-up synthesis of nanowires, the reversed solid-liquid-vapor (SLV) mechanism is rarely studied. Solid-liquid-vapor etching allows in principle to create nanowire-shaped holes, which would significantly expand the toolbox of bottom-up synthesis methods towards complex nanostructure assembly. Here, we aimed to realize SLV etching of single-crystalline silicon using a hydrogen plasma for etching instead of corrosive gases. We were able to demonstrate that the etching of holes using reactive hydrogen species is in principle feasible but requires deliberate adjustment of the process parameters. Furthermore, we investigated the effect of catalyst size, etching time and hydrogen flow rate on the process and discuss the theoretical background of the SLV mechanism.

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“…For non-tapered NW growth, HCl was added in a molar fraction of v HCL = 20 Â 10 À6 . The etch experiments after growth were carried out in PH 3 /H 2 to prevent rapid dissolution of the NWs by P desorption [15]. For the v HCL dependent experiments (0 < v HCL < 50.0 Â 10 À6 ) the NWs were etched for 5 min at 450°C directly after growth.…”

Section: Methodsmentioning

confidence: 99%