Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Abstract

We investigated the atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001) using x-ray absorption near the edge structure (XANES) and hard x-ray photoelectron spectroscopy. We found that the Sn dopant had only one chemical state, which was a Sn4+ oxidation state. The bond length around the Sn dopant atom became longer due to the relaxation effect after the Sn dopant insertion. Comparison of the experimental and simulated XANES spectra showed that the octahedral Ga substitutional site in the β-Ga2O3(001) is an active Sn dopant site.