Atomic models for the ErSi<sub>2</sub>/Si(111) interface

Koutentaki, E.; Frangis, N.

doi:10.1002/pssb.200301831

Cited by 1 publication

(2 citation statements)

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“…The lattice parameters on the ErSi 2 ͑0001͒ hexagonal plane nearly match those on the Si͑111͒ planes ͑0.384 nm͒ with the orientation relations of ͑111͒ Si / /͑0001͒ ErSi 2 , ͓110͔ Si / /͓1010͔ ErSi 2 , and ͓011͔ Si / /͓1100͔ ErSi 2 . 20 The lattice mismatches along both directions of ͓110͔ Si and ͓011͔ Si are as low as 1.3%, which favors hexagonal ErSi 2 epitaxial growth on Si͑111͒. However, the surface of Si͑001͒ has a tetragonal symmetry instead of a hexagonal symmetry.…”

Section: Resultsmentioning

confidence: 98%

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Thermal stability of Er2O3 thin films grown epitaxially on Si substrates

Chen

Zhu

et al. 2007

Journal of Applied Physics

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Articles you may be interested inThe thermal stability of Er 2 O 3 thin films grown epitaxially on Si substrates has been investigated in this paper by x-ray diffraction and high resolution transmission electron microscopy. The Er 2 O 3 /Si͑001͒ films are found to react with Si to form silicates at the temperature of 450°C in N 2 ambience, whereas O 2 ambience can prevent the silicate formation even at the temperature of 600°C. However, at a high temperature of 900°C in either N 2 or O 2 ambience, Er 2 O 3 films react with Si, and both silicate and SiO 2 are formed in the films. In addition, the Er 2 O 3 films grown on Si͑111͒ substrates show poorer thermal stability than those grown on Si͑001͒ substrates; Er silicide is formed at the interface in the films annealed at 450°C in O 2 ambience, which is attributed to that the reaction product hexagonal ErSi 2 is formed more easily on Si͑111͒ than on Si͑001͒ due to structure similarity as well as small lattice mismatch.

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Section: Resultsmentioning

confidence: 98%

“…According to the previous research, Er silicide can be easily epitaxially grown on Si. [18][19][20] The silicide epitaxial orientation on Si ͑111͒ is ErSi 2 ͑0001͒, and the corresponding XRD peak is at the position of 44.26°. Due to the epitaxial growth, other peaks corresponding to silicide are not observed.…”

Section: Resultsmentioning

confidence: 99%