Tungsten tips oriented toward the <111> direction were fabricated by field-assisted O 2 etching, and observed by means of scanning transmission electron microscopy (STEM) and field ion microscopy (FIM). The radii of curvature of the tip apexes were sharpened from 16-20 nm to less than 2 nm. The O 2 etching is considered to start from the O 2 imaging region depending on the field distribution around the tip apex and shank. We estimated the effect of field distribution derived from a shank shape and applied bias voltage. The results showed that the tip with a cylindrical shank before the O 2 etching became sharper than tips having an initial paraboloidal shape, with respective cone angles (defined in Fig. 3) of 58° and 80°. The field emission (FE) patterns of these etched tips became a single spot derived from the W(111) plane, and their opening angles (defined by the full width at half maximum) were 14.4° and 7.8°, respectively.