Atomic layering and misfit-induced densification at the Si(111)/In solid–liquid interface

Vonk, Vedran; Cremers, Melissa; Jong, Aryan E. F. de; Pintea, Sebastian; Vlieg, E.

doi:10.1016/j.susc.2013.10.022

Cited by 9 publications

(12 citation statements)

References 31 publications

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“…Thermal vibration can explain this, since its squared amplitude scales linearly with the temperature to first order in the harmonic approximation [26]. The correlation length of approximately 20 Å near room temperature has also been found for other solid-liquid metal-semiconductor interfaces [25,27,28]. The linear decrease of the correlation with an increasing temperature has been observed for room-temperature ionic liquids (RTILs) in contact with a hard wall as well [29].…”

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confidence: 72%

“…At the very interface, i.e., the last crystal layer (Ga0) and the first quasiliquid transition layer (Ga1), we find an appreciable number of atomic vacancies, which lead to a density deficit compared to a bulk terminated situation. Indications of atomic vacancies in the two layers adjacent to the solid-liquid interface have been observed before [18,25,34], but the quality of the interface and/or x-ray scattering power of the systems in those studies did not allow for any solid conclusions to be drawn. In the present case, the high quality of the system gives a high confidence in the presence of these defects.…”

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confidence: 95%

“…This value is way beyond the determined error bar. It could be that the substrate-induced lateral interaction, which correlates with the liquid layer spacing, annihilates its increase due to Ga thermal expansion [25]. The correlation length of the layering decreases approximately linearly with temperature; see Fig.…”

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confidence: 97%

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Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

et al. 2020

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The equilibrium atomic interface structure between Ga and GaN(0001) is shown to contain substrate surface vacancies followed by substrate-induced layering and preferential lateral ordering in the liquid. The uncovered presence of point defects, in the form of vacancies at both sides of the solid-liquid interface, is an important structural feature which governs the local physical properties. Our x-ray diffraction study reveals that the layering is very stable and persists up to a temperature of 1123 K and a nitrogen pressure of 32 bar. The Ga layer spacing agrees remarkably well with the Friedel oscillation period for this system.

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confidence: 72%

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confidence: 95%

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Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

et al. 2020

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“…The inconsistency in the atomic arrangement at this interface has not been clearly explained because of the difficulty in the atomic-scale characterisation of the S/L interface both theoretically and experimentally. As an interface-sensitive, angstrom-scale resolution surface X-ray diffraction (SXRD) and X-ray crystal truncation rod (CTR) analysis has provided new insights into atomic arrangements at surfaces and interfaces 6,[25][26][27][28][29][30][31][32][33] . Compared with HRTEM, the CTR technique is a spatially averaged (~0.2 × 0.25 mm 2 in our experiment) method that can also easily distinguish the atomic species 34 .…”

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confidence: 99%

Atomistics of pre-nucleation layering of liquid metals at the interface with poor nucleants

et al. 2019

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Liquid layering at heterogeneous solid/liquid interfaces is a general phenomenon, which provides structural templates for nucleation of crystalline phases on potent nucleants. However, its efficacy near poor nucleants is incompletely understood. Here we use a combination of X-ray crystal truncation rod analysis and ab initio molecular dynamics to probe the pre-nucleation liquid layering at the sapphire-aluminium solid/liquid interface. At the sapphire side, a~1.6 aluminium-terminated structure develops, and at the liquid side, two prenucleation layers emerge at 950 K. No more pre-nucleation layer forms with decreasing temperature indicating that nucleation of crystalline aluminium through layer-by-layer atomic adsorption of liquid atoms is not favoured. Instead, the appearance of stochastically-formed nuclei near the substrate is supported by our experiments. Nucleation on poor nucleants is dominated by the stochastic nucleation events which are substantially influenced by the prenucleation layers that determine the surface structure in contact with the nuclei.

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“…Indeed, already deposition of the order of 1 ML of Ga or As on AlGaAs changes the surface reconstructions [53], for which dangling bonds and strain play a big role. There are also reports for the Si(111) surface, buried under liquid indium [54] or lead [55], which do not observe a reconstructed surface at the interface. These examples are important when discussing the stability of surfaces in contact with liquids and illustrate why in first-order approximation we do not assume high-index facets to have formed.…”

Section: Discussionmentioning

confidence: 90%

Faceting of local droplet-etched nanoholes in AlGaAs

Vonk

Slobodskyy

Keller

et al. 2018

Phys. Rev. Materials

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Nanoholes, drilled in the (001) surface of AlGaAs by local Al droplet etching, are shown to consist of faceted inner walls. The most prominent facets of the inverted pyramidlike nano-sized etch pits are the {111}A and {111}B surfaces, which differ in their atomic surface terminations. In the [110] direction, the {111} facets change to {112} and/or {113}, which are both stepped surfaces with (111)A terraces. Etching-temperaturedependent data indicate that this facet transition seems kinetically hindered up to etch temperatures above 660°C, at which point the walls along [110] have already evolved completely towards {111}B facets. The redeposited ring material outside the nanohole develops facets with indices of (115) and higher, thereby forming relatively flat structures. The facets and their indices are unraveled by a combination of atomic force microscopy, scanning electron microscopy, and x-ray diffraction, which is performed on an ensemble as well as on a single hole using nanodiffraction. These results imply that this nanoconfined etching process can be largely understood in a vapor-liquid-solid scheme, which includes the bulk thermodynamics in the AlGa As system, the surface energies of low index facets, and their etch rates and surface terminations.

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Atomic layering and misfit-induced densification at the Si(111)/In solid–liquid interface

Cited by 9 publications

References 31 publications

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Atomistics of pre-nucleation layering of liquid metals at the interface with poor nucleants

Faceting of local droplet-etched nanoholes in AlGaAs

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