Atomic-layer soft plasma etching of MoS2

Xiao, Shuzhang; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya Ken

doi:10.1038/srep19945

Cited by 96 publications

(97 citation statements)

References 36 publications

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“…An SF 6 dry plasma was used to etch MoS 2 (SF 6 : 30 sccm, Pressure: 30 mT, RF source power: 15 W). In order to achieve slower etching rate, we used a reduced RF source power as compared to previous studies 19,20 . This gave better control over the etching rate and possibly minimizes the edge roughness.…”

mentioning

confidence: 99%

Single layer MoS2 nanoribbon field effect transistor

Kotekar‐Patil

Deng

Wong

et al. 2019

Applied Physics Letters

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We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50 nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 µA/µm resulting in high on/off ratio of the order of 10 5 . We observe mobility reaching as high as 50 cm 2 /V.s with increasing source-drain bias.

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mentioning

confidence: 99%

Single layer MoS2 nanoribbon field effect transistor

Kotekar‐Patil

Deng

Wong

et al. 2019

Applied Physics Letters

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“…Though various etching schemes have been explored, [19][20][21][22][23][24][25][26][27][28][29] a scalable and controllable thickness reduction down to the mono-or few-layer regimes starting from arbitrary thickness and area has not been demonstrated. Methods utilizing material chemistry exploit either harsh chemicals 19 or reactive plasma environment, are material specific.…”

mentioning

confidence: 99%

“…Methods utilizing material chemistry exploit either harsh chemicals 19 or reactive plasma environment, are material specific. [21][22][23]28 Physical etching involves high temperature annealing, 25,27 laser assisted thermal ablation 20 or plasma environments, 24,26,29 results in degraded electrical properties. Postetch electrical characterization has not been performed in most cases, except for a few.…”

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confidence: 99%

Topography preserved microwave plasma etching for top-down layer engineering in MoS₂and other van der Waals materials

2017

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A generic and universal layer engineering strategy for van der Waals (vW) materials, scalable and compatible with the current semiconductor technology is of paramout importance in realizing all-two-dimensional logic circuits and move beyond the silicon scaling limit. In this letter, we demonstrate a scalable and highly controllable microwave plasma based layer engineering strategy for MoS 2 and other vW materials. Using this technique we etch MoS 2 flakes layer-by-layer starting from arbitrary thickness and area down to the mono-or the few-layer limit. From Raman spectroscopy, atomic force microscopy, photoluminescence spectroscopy, scanning electron microscopy and transmission electron microscopy, we confirm that the structural and morphological properties of the material have not been compromised. The process preserves the pre-etch layer topography and yields a smooth and pristine-like surface. We explore the electrical properties utilising a field effect transistor geometry and find that the mobility values of our samples are comparable to those of the pristine ones. The layer removal does not involve any reactive gasses or chemical reactions and relies on breaking the weak inter-layer vW interaction making it a generic technique for a wide spectrum of layered materials and heterostructures. We demonstrate the wide applicability of the technique by extending it to other systems such as Graphene, h-BN and WSe 2 . In addition, using the microwave plasma in combination with standard lithography, we illustrate a lateral patterning scheme for device fabrication.All-two-dimensional devices consisting of semiconducting, metallic and insulating van der Waals (vW) materials offer a comprehensive-solution to overcome the current scaling limit of the micro-electronic industry. Successful demonstrations of heterostructures by stalking various two-dimensional (2D) systems

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“…Argon plasma also etches TMDs and black phosphorene (BP), but the inert gases remove material by physical bombardment with low etching rate . The mixed plasma of SF 6 and N 2 etches TMDs such as MoS 2 , and the resulting products are gaseous . The chemical reaction equations are shown in formula (1), (2), and (3).…”

Section: Etching Techniques In 2d Materialsmentioning

confidence: 99%

“…MoS 2 and MoSe 2 are softly etched by SF 6 /N 2 mixture plasma to obtain atomic layer precision and without affecting the remaining layers . The chemical reaction equation of MoS 2 and SF 6 /N 2 is shown in formula (1).…”

Section: Applications In 2d Materialsmentioning

confidence: 99%

Etching Techniques in 2D Materials

Wang

Zhong

et al. 2019

Adv Materials Technologies

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2D materials including graphene, transition metal dichalcogenides, and phosphorene have been widely researched for electronic and optoelectronic applications in recent years. Etching techniques for controlling the layer number and patterning shape of layered materials have been demonstrated to be a crucial part of the fabrication of various functional devices. Six types of etching techniques used in 2D materials are discussed, and the mechanism, purpose, and advantages of each technique are explored. In addition to the mature etching techniques widely used in thin‐film semiconductors processing such as reactive ion etching and reactive gas etching, distinct etching techniques adpoted for 2D materials including self‐limited atomic layer etching, metal‐assisted splitting, laser etching, and thermal annealing are introduced in detail. In particular, the modification of 2D materials resulting from etching‐induced defects, in particular changes to the electrical and optical properties, are discussed. Due to of the reduced dimensions and layered property of 2D materials, etching with atomic‐layer precision, anisotropy, and selectivity can be required to control the layer number and edge or define some nanostructures and special structures. Recent advances are presented for further clarification. The diversity of etching techniques effectively facilitates the development of functional devices based on 2D materials.

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Atomic-layer soft plasma etching of MoS2

Cited by 96 publications

References 36 publications

Single layer MoS2 nanoribbon field effect transistor

Single layer MoS2 nanoribbon field effect transistor

Topography preserved microwave plasma etching for top-down layer engineering in MoS₂and other van der Waals materials

Etching Techniques in 2D Materials

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Atomic-layer soft plasma etching of MoS2

Cited by 96 publications

References 36 publications

Single layer MoS2 nanoribbon field effect transistor

Single layer MoS2 nanoribbon field effect transistor

Topography preserved microwave plasma etching for top-down layer engineering in MoS2and other van der Waals materials

Etching Techniques in 2D Materials

Contact Info

Product

Resources

About

Topography preserved microwave plasma etching for top-down layer engineering in MoS₂and other van der Waals materials