We have studied the dependence of porous silicon morphology and porosity
on fabrication conditions. N-type (100) silicon wafers with resistivity of
2–5 Ω cm
were electrochemically etched at various current densities and anodization times. Surface
morphology and the thickness of the samples were examined by scanning electron
microscopy (SEM). Detailed information of the porous silicon layer morphology with
variation of preparation conditions was obtained by positron annihilation spectroscopy
(PAS): the depth-defect profile and open pore interconnectivity on the sample surface has
been studied using a slow positron beam. Coincidence Doppler broadening spectroscopy
(CDBS) was used to study the chemical environment of the samples. The presence of
silicon micropores with diameter varying from 1.37 to 1.51 nm was determined by positron
lifetime spectroscopy (PALS). Visible luminescence from the samples was observed, which
is considered to be a combination effect of quantum confinement and the effect of
Si = O double bond
formation near the SiO2/Si
interface according to the results from photoluminescence (PL) and positron annihilation
spectroscopy measurements. The work shows that the study of the positronium formed
when a positron is implanted into the porous surface provides valuable information on the
pore distribution and open pore interconnectivity, which suggests that positron annihilation
spectroscopy is a useful tool in the porous silicon micropores’ characterization.