Atomic layer deposition of ZnSe/CdSe superlattice nanowires

Solanki, R.; Huo, J.; Freeouf, J. L.; Miner, B.

doi:10.1063/1.1521570

Cited by 131 publications

(85 citation statements)

References 5 publications

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“…Hence, it clearly shows that the growth of ZnSe film takes place via cluster by cluster deposition, i.e. aggregation of colloidal particles formed in the solution rather than ion by ion deposition on the surface of substrate, which agrees well with the results previously reported by many workers [25][26][27]. It is worth to mention that, in the literature there is no evidence for ion by ion growth of ZnSe [28].…”

Section: Xrd Analysissupporting

confidence: 82%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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Substrate temperature dependent optical and structural properties of Zinc selenide (ZnSe) thin films were studied. Films were grown onto glass substrate by electron beam evaporation technique in high vacuum (10-6 Torr) at various temperatures in range of room temperature (RT) to 300 °C. Microstrain and dislocation density were also found to vary between 0.69×10 -3 , 1.12×10 -3 , 3.59×1010 cm -2 and 9.49×1010 cm -2 . The lattice parameter value 'a' for these films was calculated and found to increase from 5.577 Å to 5.652 Å respectively. Scanning electron micrographs (SEM) showed that clusters are composed of spherical and needle like nanocrystals distributed uniformly over the surface whose c-axis is parallel to the surface of the film. This confirmed the mixture comprised cubic and hexagonal phases. A comparison of atomic force microscopy (AFM) images showed that the grain size increased from about 139 nm for the RT deposited ZnSe film to about 39 nm for the ZnSe film deposited at 300 °C. The binding energy of 54.4 eV is similar to the values obtained for other selenides. The Auger parameter for zinc was calculated from the experimental binding energies of the zinc (2p 3/2 ) XPS line and the LMM Auger line the reference values are 1042.49 eV -1020.19 eV for zinc. All the films were characterized optically by UV-vis-NIR spectrophotometer in photon wavelength range (300 nm -2000 nm). The optical transmittance and reflectance were utilized to compute the absorption coefficient, refractive index and band gap energy of the films. The bandgap value of RT and 100 oC deposited ZnSe films are 2.88 eV and 2.78 eV, which are found to be blue shifted by about 0.08 -0.18 eV from the bandgap value of 2.70 eV for the standard bulk material.

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Section: Xrd Analysissupporting

confidence: 82%

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Kaviyarasu¹

2016

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“…[6][7][8] In these studies, the vapor-liquid-solid (VLS) growth mechanism 9,10 takes effect in superlattice nanowire growth via altering the reaction atmosphere periodically. Other synthetic methods such as the template-based electrochemical method, [11][12][13] partial cation exchange techniques, 14 and atomic layer deposition 15 have also been reported. All these techniques can tune the electronic band location of the products, but not to modulate light propagation.…”

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confidence: 99%

Preparation and Periodic Emission of Superlattice CdS/CdS:SnS₂ Microwires

2010

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Semiconductor superlattice micro-/nanowires could greatly increase the versatility and power of modulating electronic (or excitonic, photonic) transport, optical properties. In this communication, we report growth of a semiconductor CdS/CdS: SnS 2 superlattice microwire through a coevaporation technique with microenvironmental control. Such a novel superlattice microwire can modulate the exciton and photons to show multipeak emissions with periods in a wide spectral range, which arise in the 1-d photon crystal and confined exciton emission. This system can be widely used in producing multicolor emissions, lowthreshold lasing, study light-matter interaction, slow light engineering, and weak nonlinear optical devices.One-dimensional (1D) nanostructures with modulated compositions and microstructures have gained a tremendous amount of attention in the past few years due to their fascinating chemistry and size-, shape-, and material-dependent properties. Among 1D segmented structures, semiconductor superlattice nanowires with a periodic composition modulation along the axial direction have recently become of particular interest. This is due in part to the exciting electronic and optical applications of new 1D nanophotonic building blocks.

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“…In this way resonant diodes and quantum transistors used in novel nanoelectronic devices are made. Hence, in plenty of experimental as well as theoretical works, electron, hole,and exciton energy states are studied in composite quantum wires [10][11][12][13][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…Significant progress in electronic microscopy makes it possible to experimentally investigate the structure of grown quantum wires, observe the size and form dependences of these quasi-one-dimensional nanoscale heterosystems on their growth conditions. In particular, for the InGaAs, GaAs, ZnO quantum wires carrier concentrations and mobilities with different external physical parameters are defined, and luminescence, electro-and photoconductivity measurements are done [19,20].…”

Section: Introductionmentioning

confidence: 99%

Properties of a charge in the nanoheterosystems with quantum wells and barriers

Boichuk¹,

Bilynskyi²,

Shakleina³

et al. 2010

Condens. Matter Phys.

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In the paper a quasi-one-dimensional three-layer nanowire (NW) with an intermediate layer at the separation boundaries is described by the Kronig-Penney model with δ-function potentials. The distance between the last or supreme atoms of the intermediate layer is a parameter of the problem and ranges from zero to two lattice parameters of crystals. A precise solution is obtained for the quantum-mechanical reflection coefficient R which makes it possible to determine the dependence of the factor on a wave vector, widths of an intermediate layer and a monolayer of the nanoheterostructure. The specific calculations are performed for the GaAs/AlAs/GaAs and AlAs/GaAs/AlAS nanowires. The comparison of the reflection coefficients in the envelope-function approximation and in the effective mass method is performed at small values of a wave vector. It is shown that similar results can be received using the refined procedure, originally proposed by Harrison, with appropriately taken parameters. For the cosinusoidal dependence of the energy on a wave vector which arises in the Kronig-Penney model within the framework of the S-matrix scattering method, we determined the binding states energy for a AlAs/GaAs/AlAs quantum well wire.

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Atomic layer deposition of ZnSe/CdSe superlattice nanowires

Cited by 131 publications

References 5 publications

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Preparation and Periodic Emission of Superlattice CdS/CdS:SnS₂ Microwires

Properties of a charge in the nanoheterosystems with quantum wells and barriers

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Atomic layer deposition of ZnSe/CdSe superlattice nanowires

Cited by 131 publications

References 5 publications

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Quantum phenomena of ZnSe nanocrystals prepared by electron beam evaporation technique

Preparation and Periodic Emission of Superlattice CdS/CdS:SnS2 Microwires

Properties of a charge in the nanoheterosystems with quantum wells and barriers

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Preparation and Periodic Emission of Superlattice CdS/CdS:SnS₂ Microwires