2000
DOI: 10.1002/1521-3862(200011)6:6<303::aid-cvde303>3.3.co;2-a
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Atomic Layer Deposition of Titanium Oxide from TiI4 and H2O2

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Cited by 11 publications
(16 citation statements)
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“…The thickness of the TiO 2 coating increases almost linearly with the number of ALD cycles at an average deposition rate of 0.09 nm/cycle, which might be attributable to the repeated cycles of self-limiting solid–gas reactions based on the LBL self-assembly chemistry between TiO 2 coating and silk fabrics. Notably, the growth rate of the TiO 2 on the surface of silk fabrics is lower than the estimated theoretical value for a monomolecular layer of TiO 2 due to the effect of temperature, pulse length, and pressure …”
Section: Resultsmentioning
confidence: 63%
See 1 more Smart Citation
“…The thickness of the TiO 2 coating increases almost linearly with the number of ALD cycles at an average deposition rate of 0.09 nm/cycle, which might be attributable to the repeated cycles of self-limiting solid–gas reactions based on the LBL self-assembly chemistry between TiO 2 coating and silk fabrics. Notably, the growth rate of the TiO 2 on the surface of silk fabrics is lower than the estimated theoretical value for a monomolecular layer of TiO 2 due to the effect of temperature, pulse length, and pressure …”
Section: Resultsmentioning
confidence: 63%
“…Notably, the growth rate of the TiO 2 on the surface of silk fabrics is lower than the estimated theoretical value for a monomolecular layer of TiO 2 due to the effect of temperature, pulse length, and pressure. 46 As a flexible substance, it is difficult to determine the baseline for a water droplet because of the silk fibers sticking out from the surface of silk fabric, which may lead to the possible underestimation of the WCAs. 47 To obtain accurate WCAs, the baseline was set manually in parallel with the surface of the silk fabric and at the same distance vertically from the top point of the water in the measurement of all the samples.…”
Section: Resultsmentioning
confidence: 99%
“…1,2,11 The ALD processes without intentional hydroxylation of the oxide surface have mostly been based on organic precursors of the corresponding metals. 19 in comparison to that in the TiI 4 -H 2 O process. This may, at least partially, be caused by the influence of oxygen, possibly released from the H 2 O 2 .…”
Section: Introductionmentioning
confidence: 92%
“…The oxygen sources most frequently used in ALD of oxides are H 2 O, [1][2][3][11][12][13][14][15][16][17][18] [19][20][21] and various alcohols. 22,23 formed as a result of surface reactions during the H 2 O, H 2 O 2 , or alcohol pulse.…”
Section: Introductionmentioning
confidence: 99%
“…AAO has been successfully used as a template to fabricate nanowires and nanotubes of semiconductor, metal, and alloy. Electrodeposition, sol–gel, and wet chemical methods have always been adopted to prepare nanomaterials based on AAO template. Previously, ALD has been applied to fabricate TiO 2 thin films , and TiO 2 /cellulose composites . It has also been demonstrated recently that ALD can coat a uniform film inside of each pore of AAO in a layer-by-layer deposition process over the entire pore length and provide excellent thickness control due to its unique self-limiting growth mechanism. …”
Section: Introductionmentioning
confidence: 99%