Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Xie, Qi; Jiang, Yu-Long; Detavernier, Christophe; Deduytsche, Davy; Meirhaeghe, R. L. Van; Ru, Guo-Ping; Li, Bing‐Zong; Qu, Xin-Ping

doi:10.1063/1.2798384

Cited by 237 publications

(236 citation statements)

References 19 publications

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“…The effects of changes in water pulse length were studied by changing the water pulse time between 500 ms and 3 s. Figure 3 shows the deposition rates and refractive indices of the films, which were deposited using TTIP and water with ABAB… cycles at 80, 100, and 120 C. The growth of titanium dioxide on the silicon surface saturated with approximately 2 s of water pulse, which gave the maximum growth rate of 0.33 Å /cycle at 120 C. Varying temperature in the range of 80-120 C had no significant effect on the growth rate; however, saturation occurred at lower water pulse times for higher temperatures. Xie et al 36 measured a growth rate of 0.03-0.15 Å /cycle between 50 and 150 C. They also reported an increase in the growth rate in the temperature range of 50-150 C, which does not agree with the results of this study. Both Rahtu and Ritala 37 and Ritala and Leskelii 38 reported a growth rate of 0.15 Å /cycle at substrate reported of 1.5 Å /cycle at the same substrate temperature.…”

Section: Water Processcontrasting

confidence: 55%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 C) were used to grow moisture barrier TiO 2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å /cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO 2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO 2 , but the deposition time could be reduced using SALD. The TiO 2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 Â 10 À4 g day À1 m À2 (38 C and 90% RH) was measured for 20 nm of TiO 2 film deposited by plasma-assisted ALD.

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Section: Water Processcontrasting

confidence: 55%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…[1][2][3][4][5][6][7][8][9][10] The use of TiO 2 powders or films is potentially important in the attempts to solve some environmental and energy problems. 11 Moreover, TiO 2 coatings improve surface hardness and wear resistance.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Marchi

Bilmes

Ribeiro³

et al. 2010

Journal of Applied Physics

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Articles you may be interested inA comprehensive study of nonstoichiometry titanium oxide thin films ͑TiO x , 0.3Յ x Յ 2͒ prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence.

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“…We deposit TiO 2 by atomic layer deposition (ALD) at 90°C with tetrakis(dimethylamido)titanium (TDMAT) as the precursor due to its high deposition rate and absence of defect-driven absorption that is typical of TiCl 4 -based precursors (17). Additionally, use of an ALD process offers several advantages.…”

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confidence: 99%

Broadband high-efficiency dielectric metasurfaces for the visible spectrum

Devlin

Khorasaninejad

Chen

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

468

376

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Metasurfaces are planar optical elements that hold promise for overcoming the limitations of refractive and conventional diffractive optics. Original dielectric metasurfaces are limited to transparency windows at infrared wavelengths because of significant optical absorption and loss at visible wavelengths. Thus, it is critical that new materials and nanofabrication techniques be developed to extend dielectric metasurfaces across the visible spectrum and to enable applications such as high numerical aperture lenses, color holograms, and wearable optics. Here, we demonstrate high performance dielectric metasurfaces in the form of holograms for red, green, and blue wavelengths with record absolute efficiency (>78%). We use atomic layer deposition of amorphous titanium dioxide with surface roughness less than 1 nm and negligible optical loss. We use a process for fabricating dielectric metasurfaces that allows us to produce anisotropic, subwavelength-spaced dielectric nanostructures with shape birefringence. This process is capable of realizing any high-efficiency metasurface optical element, e.g., metalenses and axicons.devices composed of subwavelength-spaced units and near-flat profiles compared with refractive optics (7-9)-have allowed unprecedented control over optical wavefronts (5) while circumventing Ohmic losses associated with plasmonic metasurfaces. Due to the scientific and technological importance of visible wavelengths, there has been increasing effort to realize DMs at these wavelengths. For example, silicon nitride DMs have been realized at a red wavelength (λ = 633 nm) (10), scattering properties of coupled TiO 2 resonators (11) have been examined, and TiO 2 binary diffraction gratings have been fabricated via top-down etching (12). However, no current DM implementation has been capable of providing arbitrary phase control of an optical wavefront while maintaining high efficiency across the entire visible spectrum (especially at blue and green wavelengths). Furthermore, the typical top-down techniques used to implement these metasurfaces can introduce significant surface roughness and make it difficult to create subwavelength sampling of a desired optical phase profile.In this paper, we demonstrate amorphous TiO 2 metasurfaces that maintain high efficiency across the entire visible spectrum. Our approach to creating DMs uses a bottom-up nanofabrication via atomic layer deposition providing high-aspect ratio, anisotropic dielectric nanostructures with minimal surface roughness. As proof of the concept that we can provide control of the phase of a wavefront from 0 to 2π, a requirement for many optical components, we produced metasurface holograms based on geometric phase. Efficient metasurfaces with metallic components operating in reflection have been demonstrated at red and nearinfrared wavelengths (13, 14) but have efficiencies of <1% and <10% at blue and green wavelengths, respectively (15, 16). Thus, the TiO 2 metasurfaces we demonstrate here provide substantial improvement with efficiencies fro...

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Atomic layer deposition of TiO2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2O

Cited by 237 publications

References 19 publications

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Low temperature temporal and spatial atomic layer deposition of TiO2 films

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Broadband high-efficiency dielectric metasurfaces for the visible spectrum

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