2023
DOI: 10.1016/j.apsusc.2023.158410
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Atomic layer deposition of SnO2 on In2O3 enables ultrasensitive NO2 detection at room temperature and DFT mechanism research

Qiumei Wang,
Lihao Zhou,
Shaobo Li
et al.
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Cited by 4 publications
(2 citation statements)
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“…Additionally, due to the low process temperature of ALD, it can be used to deposit on various substrate materials, including organic and sensitive materials. 160 ALD technology plays a crucial role in the manufacture of gas sensors. Because it can control the deposition of films at the atomic level, the sensors manufactured are highly sensitive and accurate.…”
Section: Synthesis Methodsmentioning
confidence: 99%
“…Additionally, due to the low process temperature of ALD, it can be used to deposit on various substrate materials, including organic and sensitive materials. 160 ALD technology plays a crucial role in the manufacture of gas sensors. Because it can control the deposition of films at the atomic level, the sensors manufactured are highly sensitive and accurate.…”
Section: Synthesis Methodsmentioning
confidence: 99%
“…The slightly increased presence of surface adsorbed oxygen (O ads ) can act as donor impurities [33] incorporating more conductive chemisorbed oxygen species into SnO 2 upon NiO doping [34]. This phenomenon not only reduces the band gap energy [33], but also augments the adsorption capacity [35] and facilitates catalytic activity in the reaction with the target gas [36]. These favorable alterations may boost the H 2 sensing performance.…”
Section: Sensor Fabrication and Sensing Testmentioning
confidence: 99%