Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O<sub>2</sub>

Jung, Hyo Jun; Han, Jeong Hwan; Jung, Eun‐Hee; Park, Bo Keun; Hwang, Jin‐Ha; Son, Seung Uk; Kim, Chang Gyoun; Chung, Taek‐Mo; An, Ki‐Seok

doi:10.1021/cm5035485

Cited by 36 publications

(35 citation statements)

References 22 publications

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“…ALD of RuO 2 has indeed already been reported. Jung et al reported growth of RuO 2 below 230 °C, and also point on the difficulties with oxidative decomposition of both precursors and film at higher temperatures . Unfortunately, the current routes for deposition of strontium containing materials without plasma and with low carbon contamination typically require temperatures above 230 °C, which is the upper limit for RuO 2 ‐deposition.…”

Section: Expanding the Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

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properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

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Section: Expanding the Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

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“…High‐resolution XPS spectra of Ru 3d revealed a peak shift to the higher binding energy after IPL irradiation (Figure S4b, Supporting Information). A peak shift to high energy was previously observed in the case of oxidation from metallic Ru . High‐resolution XPS spectra of Ru 3 p were investigated to understand the effect of IPL irradiation (Figure e,f).…”

Section: Resultsmentioning

confidence: 72%

Optically Sintered 2D RuO₂ Nanosheets: Temperature‐Controlled NO₂ Reaction

Choi

Jang

Park

et al. 2017

Adv Funct Materials

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examples include transition metal dichalcogenides (MoS 2 , MoSe 2 , WS 2 , WSe 2 , etc.), [6] metal oxide (Ti oxides, Mn oxides, Ru oxides, etc.), [7][8][9] and layered double hydroxides. [9] In particular, 2D metal oxides NSs such as Ti oxides, [10,11] Mn oxide, [12,13] and Ru oxides [14] have been intensively studied for applications in dielectric nanodevices and electrochemical energy storage by facilitating metallic and semiconducting properties. One of the most promising metal oxide NSs is monolayer Ru oxide exhibiting a highly conductive property. In-depth studies have been performed to establish a synthesis method and investigate the material properties of Ru oxide NSs. Particularly, considerable progress has been made using Ru oxide NSs as an effective catalyst for electrochemical supercapacitors, oxygen reduction electrocatalysts, and photocatalysts. [15][16][17][18] Very interesting features of metal oxide NSs triggered extensive research; however, the applications of the layered metal oxides are mainly in energy conversion and storage systems. For this reason, exploration and discovery of new applications are imperative to expand the versatility of metal oxide NSs in many research fields.Recently, the detection of chemical species using wearable sensors has gained much interest due to the need of real-time and on-site monitoring of environmental and physical conditions. [19][20][21] Nanostructured metal oxides using 0D nanoparticles and 1D nanofibers have been widely studied for highly sensitive chemical sensors. [22][23][24][25] However, the inherently brittle property of metal oxides limits further application as sensing layers in wearable platform. As an emerging sensing structure, 2D-layered NSs are the most suitable candidate for wearable chemical sensors due to their mechanical flexibility as well as large surface reaction sites. Thus far, atomically thin 2D graphene and transition metal dichalcogenides (TMD) layers have been mainly investigated for chemical sensors. [26][27][28][29][30][31][32] Late et al. evaluated chemical sensing characteristics using a thin-layered MoS 2 transistor, which revealed high NO 2 sensitivity with five-layer MoS 2 . [33] In addition, the 2D hybrid structure of MoS 2 /graphene layers was proposed by Cho et al. [35] and Long et al. [34] for the detection of NO 2 molecules. In particular, Cho et al. demonstrated flexible NO 2 sensors by integration of the 2D hybrid MoS 2 /graphene layers on a yellow polyimide film. [35] Although numerous efforts have been made to investigate the chemical sensing characteristics of graphene and TMD layers, the chemical sensing property of atomically 2D Ru oxide nanosheets (NSs) with optically punched nanoholes are synthesized and integrated on a flexible heating substrate, i.e., silver nanowire (Ag NW)-embedded colorless polyimide (cPI) film, for application in wearable chemical sensors. Multiple discrete pores on the sub-5-nm scale are formed on the basal planes of Ru oxide NSs by irradiation of intense pulsed light. The chemical sens...

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“…In addition to the C 1s peak at a binding energy (BE) of ∼284.6 eV for the CNTs, the XPS data for the RuO 2 /CNT electrodes show Ru 3d 5/2 peaks at BE = ∼280.7 eV, which are typical of RuO 2 . 34,37 As shown in Fig. S2 of the supplementary material, three new peaks were observed in the Raman spectra of the RuO 2 /CNT electrodes that are associated with the Raman active modes of RuO 2 : ∼494 cm 1 for E g , ∼613 cm 1 for A 1g , and ∼685 cm 1 for B 2g .…”

Section: -mentioning

confidence: 92%

“…It should be noted that the Ru precursor used in this study possessed promising vaporization and thermal decomposition properties, which allowed RuO 2 to nucleate and grow at a fast rate (short incubation cycles) and at a low temperature. 34 As a result, a dimensionally stable, flexible electrode was fabricated without any significant damage (see the photographs in Fig. 1).…”

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confidence: 99%