Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

Yeo, Seungmin; Choi, Sang-Hyeok; Park, Jiyoon; Kim, Soohyun; Cheon, Taehoon; Lim, Byoung-Yong; Kim, Sun Jung

doi:10.1016/j.tsf.2013.03.074

Cited by 45 publications

(32 citation statements)

References 22 publications

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“…Ultrathin metal films are essential for numerous applications, especially in microelectronics [1], heterogeneous catalysis [2], soft X-ray optics, and sensing. Ruthenium, as a relatively low-cost noble metal, is an attractive material when high oxidation resistance is needed [3].…”

Section: Introductionmentioning

confidence: 99%

Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

et al. 2018

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High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)ruthenium) and oxygen by thermal atomic layer deposition (ALD) and compared to magnetron sputtered (MS) Ru coatings. The ALD Ru film growth and surface roughness show a significant temperature dependence. At temperatures below 200 °C, no deposition was observed on silicon and fused silica substrates. With increasing deposition temperature, the nucleation of Ru starts and leads eventually to fully closed, polycrystalline coatings. The formation of blisters starts at temperatures above 275 °C because of poor adhesion properties, which results in a high surface roughness. The optimum deposition temperature is 250 °C in our tool and leads to rather smooth film surfaces, with roughness values of approximately 3 nm. The ALD Ru thin films have similar morphology compared with MS coatings, e.g., hexagonal polycrystalline structure and high density. Discrepancies of the optical properties can be explained by the higher roughness of ALD films compared to MS coatings. To use ALD Ru for optical applications at short wavelengths (λ = 2–50 nm), further improvement of their film quality is required.

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Section: Introductionmentioning

confidence: 99%

Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

et al. 2018

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“…Це можна реалізувати в багатошарових плівкових системах на основі Ru та Co, сформованих за кімнатної температури, оскільки, згідно з [5], взаємна дифузія атомів на межі поділу шарів Ru та Co не спостерігається. Важливими стають дослідження структурно-фазового стану та фізичних властивостей одношарових плівок як Ru, так і Co. У ряді робіт [6][7][8][9] повідомляється, що при товщинах d25 нм плівки Ru мають дрібнодисперсну квазиаморфну структуру. Фізичні властивості тонких шарів Ru не досліджено, а вивчалися лише у поєднанні з іншими металами, наприклад, Cu або Al [10][11], особливості їхньої кристалічної структури.…”

Section: вступunclassified

Structural and Phase State and Magnetoresistive Properties of Spin-Valve Structures Based on Co and Ru

2020

Nanosist. Nanomater. Nanotehnol.

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“…[4][5][6][7][8][9][10] In the back-end-of-line (BEOL), Ru has been employed as a seed layer for Cu electroplating, as well as a diffusion barrier for Cu interconnects. [11][12][13][14][15] More recently, Ru is receiving considerable attention for use as the conducting interconnect material itself due to superior resistivity at dimensions relevant for sub-5 nm semiconductor devices. [16][17][18][19] Finally, Ru films, and especially Ru nanoparticles, find widespread application in catalysis, where precise control of the film thickness or particle size distribution is essential.…”

Section: Introductionmentioning

confidence: 99%

“…25,35,36 To date, a variety of Ru precursors have been examined for Ru ALD including metallocenes, β-diketonates and their derivatives, 25 and recently, zerovalent precursors. 12,[37][38][39] Typically, Ru ALD from metallocene or β-diketonate precursors suffers from long nucleation delays. 25 In addition to requiring a longer process time, recipes with long nucleation delays can result in films with rough interfaces as a result of island formation during the initial growth.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation

Chopra

Vos

Verheijen

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

Cited by 45 publications

References 22 publications

Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

Structural and Phase State and Magnetoresistive Properties of Spin-Valve Structures Based on Co and Ru

Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation

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