Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands

Han, Jeong Hwan; Jung, Eun‐Hee; Kim, Hyo Yeon; Kim, Da Hye; Park, Bo Keun; Park, Jin‐Seong; Son, Seung Uk; Chung, Taek

doi:10.1016/j.apsusc.2016.04.120

Cited by 19 publications

(15 citation statements)

References 39 publications

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“…Figure 5 b shows the In3 d 5/2 peak observed at 444.3, 444.4, 444.1, and 444.1 eV at 115–250 °C, indicating In–O bond. The In3 d 5/2 binding energies valves are close to the reported In 2 O 3 (444.2 eV) [ 23 , 37 ]. Compared to the binding energy of In 2 O 3 film deposited at 150 °C, at high growth temperatures of 200 and 250 °C, the In3 d 5/2 core peak shifted slightly to the lower binding energy of 0.3 eV.…”

Section: Resultssupporting

confidence: 85%

“…Figure 1 c displays the growth rate of ALD-In 2 O 3 thin films as a function of growth temperature using the optimized pulse conditions. Figure 1 c shows that the growth rate was directly dependent on the deposition temperature, increasing with temperature with no separate temperature window within which a constant growth rate was observed, as reported earlier with other conditions [ 23 , 24 ]. Otherwise, our results are inconsistent with the previous reports; ALD-deposited In 2 O 3 thin film with TMIn with ozone and TEIn with ozone was proposed in ALD process windows between 100 and 200 °C [ 29 , 31 ] and others [ 28 ].…”

Section: Resultssupporting

confidence: 82%

“…Moreover, they are not suitable for industrial application. The organometallic liquid indium precursors are also employed for the ALD process, but the result revealed low reactivity and steric hindrance due to the indium precursor’s bulk size [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

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Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

et al. 2021

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Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

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Section: Resultssupporting

confidence: 85%

Section: Resultssupporting

confidence: 82%

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Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

et al. 2021

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“…An air roughness model consisting of a four-layer structure of “air, air/In 2 O 3 , In 2 O 3 and silicon wafer”, where the In 2 O 3 layer was fitted by a Tauc–Lorentz model was used to fit the data. The light absorption coefficient (α) was calculated from the extinction coefficient using the following equation [ 19 ]: α = 4πk/ λ where is λ the wavelength of the incident light. The optical band gap ( E g ) of the In 2 O 3 films was deduced by fitting the Tauc plot [ 20 ] as expressed by the equation: (αh ν ) 2 = A(h ν − E g ) where α is the light absorption coefficient of the In 2 O 3 film, h ν is the energy of the incident light, A is a constant.…”

Section: Methodsmentioning

confidence: 99%

“…An air roughness model consisting of a four-layer structure of "air, air/In 2 O 3 , In 2 O 3 and silicon wafer", where the In 2 O 3 layer was fitted by a Tauc-Lorentz model was used to fit the data. The light absorption coefficient (α) was calculated from the extinction coefficient using the following equation [19]:…”

Section: Methodsmentioning

confidence: 99%

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

et al. 2021

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Indium oxide (In2O3) film has excellent optical and electrical properties, which makes it useful for a multitude of applications. The preparation of In2O3 film via atomic layer deposition (ALD) method remains an issue as most of the available In-precursors are inactive and thermally unstable. In this work, In2O3 film was prepared by ALD using a remote O2 plasma as oxidant, which provides highly reactive oxygen radicals, and hence significantly enhancing the film growth. The substrate temperature that determines the adsorption state on the substrate and reaction energy of the precursor was investigated. At low substrate temperature (100–150 °C), the ratio of chemically adsorbed precursors is low, leading to a low growth rate and amorphous structure of the films. An amorphous-to-crystalline transition was observed at 150–200 °C. An ALD window with self-limiting reaction and a reasonable film growth rate was observed in the intermediate temperature range of 225–275 °C. At high substrate temperature (300–350 °C), the film growth rate further increases due to the decomposition of the precursors. The resulting film exhibits a rough surface which consists of coarse grains and obvious grain boundaries. The growth mode and properties of the In2O3 films prepared by plasma-enhanced ALD can be efficiently tuned by varying the substrate temperature.

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Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate

Lee

Kim

Choi

et al. 2017

Physica Rapid Research Ltrs

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Phone: þ82 42 860 7677, Fax: þ82 42 861 4151A study of substrate effect on the thermoelectric (TE) properties of Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films grown by plasma-enhanced chemical vapor deposition (PECVD) was performed. Graphene substrates which have small lattice mismatch with BT and ST were used for the preparation of highly oriented BT and ST thin films. Carrier mobility of the epitaxial BT and ST films grown on the graphene substrates increased as the deposition temperature increased, which was not observed in that of SiO 2 /Si substrates. Seebeck coefficients of the as-grown BT and ST films were observed to be maintained even though carrier concentration increased in the epitaxial BT and ST films on graphene substrate. Although Seebeck coefficient was not improved, power factor of the as-grown BT and ST films was considerably enhanced due to the increase of electrical conductivity resulting from the high carrier mobility and moderate carrier concentration in the epitaxial BT and ST films.Thermoelectric (TE) energy generators have promising applications in the operation of micro-scale electric devices and systems. Many previous researches have been focused on the enhancement of the efficiency of TE materials [1][2][3][4][5][6][7][8]. The efficiency of thermoelectric materials depends on the dimensionless thermoelectric figure of merit ZT ¼ a 2 sT/k where a, T, s, and k are the Seebeck coefficient, absolute temperature, electrical conductivity, and thermal conductivity, respectively. The recent reports explained that the enhancement of ZT was mainly due to the reduction of k by nanostructure-engineering which dramatically increases phonon boundary scattering at interfaces [1,2,[5][6][7]. However, the enhancement of ZT by increasing the thermoelectric power factor (a 2 s) has been reported [9][10][11][12].Various deposition methods have been reported for preparation of highly oriented Bi 2 Te 3 (BT) and Sb 2 Te 3 (ST) thin films, such as molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD) [13][14][15]. MOCVD has attracted the most amount of attention due to its low cost and high controllability for thin film growth, which make it most suitable for large-scale production. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD) has an advantage of low deposition temperature with a relatively high deposition rate in comparison with conventional MOCVD process.It is well known that the electrical conductivity of BT and ST along c-plane is much higher than that of c-axis because of the layered structural characteristics of single crystalline BT and ST [16,17]. Furthermore, epitaxial BT and ST thin films are also expected to have higher power factors than that of polycrystalline. However, latticematched substrate for BT and ST has rarely been reported until now except expensive yet small-sized crystalline

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Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands

Cited by 19 publications

References 39 publications

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate

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Atomic layer deposition of indium oxide thin film from a liquid indium complex containing 1-dimethylamino-2-methyl-2-propoxy ligands

Cited by 19 publications

References 39 publications

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy

Improvement of thermoelectric properties of Bi2Te3 and Sb2Te3 films grown on graphene substrate

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Improvement of thermoelectric properties of Bi₂Te₃ and Sb₂Te₃ films grown on graphene substrate