Atomic layer deposition of Ge2Sb2Te5 thin films

Ritala, Mikko; Pore, Viljami; Hatanpää, Timo; Heikkilä, Mikko; Leskelä, Markku; Schrott, A. G.; Raoux, Simone; Rossnagel, S. M.

doi:10.1016/j.mee.2009.03.014

Cited by 70 publications

(74 citation statements)

References 12 publications

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“…Recently, a number of studies have been carried out to investigate the deposition of phase-change materials by ALD and CVD techniques [9][10][11][12][13][14][15]. It has been reported that the precursor and substrates have an important influence on the microstructure and composition of Ge-Sb-Te films.…”

Section: Introductionmentioning

confidence: 99%

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Song¹,

Yao²,

Zhang³

et al. 2016

Nano Online

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Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge 2 Sb 2 Te 5 (GST) and GeSb 8 Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH 3 ) 2 N] 4 , Sb [(CH 3 ) 2 N] 3 , Te (C 4 H 9 ) 2 as precursors and plasma-activated H 2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb 8 Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb 8 Te films. These results show that ALD is an attractive method for preparation of phase-change materials.

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Section: Introductionmentioning

confidence: 99%

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Song¹,

Yao²,

Zhang³

et al. 2016

Nano Online

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show abstract

“…ALD is a gas phase thin film deposition method which can be regarded as a special modification of the more widely used chemical vapor deposition (CVD) technique [1]. In ALD, The precursors are led into the reaction in alternate pulses.…”

Section: Methodsmentioning

confidence: 99%

“…Initially, ALD was developed for deposition of materials used in electroluminescent displays but during the years, the selection of materials and their potential applications has expanded [1]. Iridium is chemically very stable, and can withstand highly oxidizing conditions [2].…”

Section: Introductionmentioning

confidence: 99%

Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs

Shirvaliloo¹

2015

JEEE

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Thin films of Noble metals such as Iridium have several potential applications in ICs. Electronic devices are fabricated on the integrated circuits that include transistor, capacitor and resistance. They can be used as electrodes in DRAMs and FRAMs, and as gate electrodes in MOSFETs. Noble metals are excellent metals for electrode fabrication because chemical stability, highly electrical resistance, highly work function and many of them can withstand highly oxidizing conditions. In this paper, emphasis is on reaction mechanisms and limits, leakage currents, electrodes and electrode interfaces and deposition techniques.

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“…Alternative deposition methods have been developed to address this issue [67]. They include chemical vapor deposition (CVD) [63], electrodeposition [68], solution-phase deposition [69], the application of bottom-up nano-materials [42], and atomic layer deposition [70]. Among those methods atomic layer deposition (ALD) is particularly promising for ultra-scaled devices, because it allows for deposition with atomic layer control of thickness and composition and very high conformality.…”

Section: Pcram Cell Design and Optimizationmentioning

confidence: 99%

“…A growth rate of about 0.30 Å/cycle was obtained where the cycle refers to a sum of binary cycles of Ge-Te and Sb-Te [70,81]. In general, in ALD the control of the ternary composition is much more challenging compared to the binaries which usually adopt automatically the correct composition.…”

Section: Ald Of Phase Change Materials With Alkyl Silyls As Telluriummentioning

confidence: 99%

Pcram

Raoux¹,

Ritala

2013

Atomic Layer Deposition for Semiconductors

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Atomic layer deposition of Ge2Sb2Te5 thin films

Cited by 70 publications

References 12 publications

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon

Production of Iridium Metal Thin Films for Application as Electrodes in DRAMs and FRAMs

Pcram

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