Atomic-layer deposition of cadmium chalcogenides on silicon

Ezhovskii, Yu. K.

doi:10.1134/s0036024414090143

Cited by 6 publications

(3 citation statements)

References 1 publication

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“…The density functional theory (DFT) calculations modeled the SiO 2 support using a hydroxylated (1 × 2) α-cristobalite (011) surface slab with hydroxyl groups on both sides. The slab model used a hydroxyl density of 0.047 per Å 2 , consistent with experimental measurements . The ALD ASA materials will have the surface alumina and silica bound to the support through a bridging bond and/or terminated with hydroxyl groups.…”

Section: In Situ Ald-ftirmentioning

confidence: 94%

“…The slab model used a hydroxyl density of 0.047 per Å 2 , consistent with experimental measurements. 21 The ALD ASA materials will have the surface alumina and silica bound to the support through a bridging bond and/or terminated with hydroxyl groups. Consequently, the ASA structure can be simplified by following the condensation between the Al(OH) 3 or Si(OH) 4 precursors with the support surface silanol groups (Si support -OH) according to…”

Section: In Situ Ald-ftirmentioning

confidence: 99%

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Tunable Solid Acid Catalyst Thin Films Prepared by Atomic Layer Deposition

Canlas

Cheng

O’Neill

et al. 2022

ACS Appl. Mater. Interfaces

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Solid acid catalysts, including zeolites and amorphous silica-aluminas (ASAs), are industrially important materials widely used in the fuel and petrochemical industries. The versatility of zeolites is due to the Brønsted acidity of the bridging hydroxyl and shape selectivity that can be tailored during and after synthesis. This is in contrast to amorphous silica-alumina, where tailoring acidity is a major challenge as the Brønsted acid structure in ASA is still debated. In both cases, however, the pore size and acidity cannot be tuned independently, and this is particularly limiting in the application of biomass conversion, where zeolite pores are too small for the molecules of interest. Herein, we present a method using atomic layer deposition (ALD) to prepare thin films of solid acid materials where the ratio of Brønsted to Lewis acid sites can be tuned precisely. This capability, combined with the sub-nm pore size control afforded by ALD yields a powerful and flexible method for synthesizing solid acid catalysts inside virtually any mesoporous host. We demonstrate the utility of these materials in two acid-catalyzed reactions relevant to biomass conversion: (1) Meerwein−Ponndorf−Verley−Oppenauer (MPVO) reaction and dehydration of fructose and (2) cascade reaction of glucose to 5-hydroxymethylfurfural. Finally, we propose a plausible structure for the Brønsted acid sites in our materials based on infrared spectroscopy and solid-state nuclear magnetic resonance measurements and density functional theory calculations and argue that this same structure might apply to conventional ASAs as well.

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Section: In Situ Ald-ftirmentioning

confidence: 94%

Section: In Situ Ald-ftirmentioning

confidence: 99%

Tunable Solid Acid Catalyst Thin Films Prepared by Atomic Layer Deposition

Canlas

Cheng

O’Neill

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…ALD of selenides and tellurides have been only limited to selenides and tellurides of Zn and Cd, as those are rare cases where constituent elements can be used as precursors [194][195][196][197]. Selenides and tellurides are less explored because their hydride compounds are toxic and would require extensive safety precautions.…”

Section: Selenides and Telluridesmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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For decades the most successful approach towards new inorganic material innovations for next‐generation devices has been to manipulate the cation composition. As this cation‐centric material development is inevitably approaching its saturation, new chemistries are needed to maintain the pace of technological progress. One of the new chemistry approaches is to play with the anions instead of the cations. Moreover, advances in fabrication techniques are needed to address the endeavors to shrink the device and component dimensions. Here, the combination of mixed‐anion chemistries, such as oxychalcogenides or carbopnictides, and the state‐of‐the‐art atomic layer deposition (ALD) thin‐film technology are highlighted. The unique bottom‐up material building mode of ALD can lead to scientifically exciting but at the same time industry‐feasible material innovations. In this brief review, the present status and prospects, and the challenges of this emerging field are discussed.

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Atomic-layer deposition of cadmium chalcogenides on silicon

Cited by 6 publications

References 1 publication

Tunable Solid Acid Catalyst Thin Films Prepared by Atomic Layer Deposition

Tunable Solid Acid Catalyst Thin Films Prepared by Atomic Layer Deposition

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

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