Atomic Layer Deposition (ALD) Co-Deposited Pt−Ru Binary and Pt Skin Catalysts for Concentrated Methanol Oxidation

Jiang, Xirong; Gür, Turgut M.; Prinz, Friedrich; Bent, Stacey F.

doi:10.1021/cm902904u

Cited by 83 publications

(56 citation statements)

References 52 publications

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“…The small grain size and considerable roughness make it difficult to determine from the SEM and AFM images when a continuous or closed film is formed, and although the morphology is also a challenge for AFM roughness measurements, the small decrease in roughness between 750 and 1000 cycles may indicate the formation of a continuous film, as demonstrated by the simulations of ALD film growth by Nilsen et al [66,67] as well as experimental observations on HfO 2 [68] and Pt [69] ALD films, for example. Additional information on the surface morphology can be obtained by examination of line profiles taken from the AFM images (Figure 3d).…”

Section: Morphologymentioning

confidence: 99%

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

106

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Compared to the most well-known 2D material, graphene, which is a semi-metal, the semiconducting 2H phase of MoS 2 is advantageous in having a band gap suitable for electronic applications. In bulk form, MoS 2 has an indirect band gap of 1.3 eV, which increases as a function of decreasing film thickness. In monolayer MoS 2 (thickness ≈0.6 nm), the band gap becomes direct with a width of 1.8 eV. [1] Importantly, to meet the requirements of different applications, properties of MoS 2 and other TMDCs can be tuned by controlling the thickness, [1] doping and alloying, [5][6][7][8] surface modification and functionalization, [9][10][11] strain, [12,13] and by creating heterostructures with other 2D materials. [6,[14][15][16] The appealing properties of TMDCs have led to a wide range of proposed applications. MoS 2 has been extensively studied as a channel material in conventional field-effect transistors, [17][18][19][20][21] as well as phototransistors and other optoelectronic devices. [16,21,22] The 2D structure of TMDCs plays a crucial role in possible applications relying on more exotic quantum phenomena, such as valleytronics. [23,24] MoS 2 has also shown promise in, for example, catalysis, [25] batteries, [26] photovoltaics, [27] sensors, [28] and medicine. [29] The production of high-quality, large-area MoS 2 films with a thickness controllable down to a monolayer, as required in many of the aforementioned applications, still remains a major challenge. Additionally, in many cases, the processing temperature should be kept as low as possible in order to avoid damaging sensitive substrates, such as polymers or nanostructures. Initially, flakes of monolayer MoS 2 were produced from natural MoS 2 crystals using micromechanical exfoliation, a topdown method capable of producing high-quality monolayers, albeit with poor throughput as well as limited control over flake thickness and dimensions. [4,30,31] Liquid-phase exfoliation of bulk crystals, on the other hand, offers good scalability, but often suffers from limited flake size, poor crystallinity, or contamination. [4,31,32] Bottom-up methods offer a more controllable way to produce MoS 2 films. High-quality MoS 2 thin films are most commonly deposited by chemical vapor deposition (CVD) or sulfurization of metal or metal oxide thin films. The most common Molybdenum disulfide (MoS 2 ) is a semiconducting 2D material, which has evoked wide interest due to its unique properties. However, the lack of controlled and scalable methods for the production of MoS 2 films at low temperatures remains a major hindrance on its way to applications. In this work, atomic layer deposition (ALD) is used to deposit crystalline MoS 2 thin films at a relatively low temperature of 300 °C. A new molybdenum precursor, Mo(thd) 3 (thd = 2,2,6,6-tetramethylheptane-3,5-dionato), is synthesized, characterized, and used for film deposition with H 2 S as the sulfur precursor. Self-limiting growth with a low growth rate of ≈0.025 Å cycle −1 , straightforward thickness control, and large-area uni...

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Section: Morphologymentioning

confidence: 99%

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Mattinen

Hatanpää

Sarnet

et al. 2017

Adv Materials Inter

106

View full text Add to dashboard Cite

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“…ALD has been successfully applied to the coating of ultrathin (thickness <10 nm) catalytic films or nano-particles conformal on electrodes [27e31]. Heterogeneous metal surface alloys fabricated by ALD are reportedly effective for methanol oxidation [31,32]. However, to the best of our knowledge, there is no report focusing on the use of the ALD catalyst for ethanol oxidation or any literature reporting working fuel cells employing these materials.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of ruthenium surface-coating on porous platinum catalysts for high-performance direct ethanol solid oxide fuel cells

Jeong

Kim

Jang

et al. 2015

Journal of Power Sources

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“…No Pt is deposited below 225°C and at 325°C the growth rate increases significantly due to thermal decomposition of MeCpPtMe 3 (13). The growth rate at 300°C is 0.5 Å cycle -1 , which is equivalent to previous work (13,14). The specific resistivity is reduced slightly with increasing temperature, from 16 to 14 μΩ•cm (13,15).…”

Section: Electrochemical Characterizationmentioning

confidence: 74%

Electrocatalytic Activity of Pt Grown by ALD on Carbon Nanotubes for Si-Based DMFC Applications

et al. 2013

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We present an anode design for silicon-based direct methanol fuel cell (DMFC) applications. Platinum was deposited conformally by atomic layer deposition (ALD) onto vertically aligned, nitrogendoped multi-walled carbon nanotubes (MWCNTs) grown on porous silicon. The deposition was carried out in a top-flow ALD reactor at 250°C, using MeCpPtMe 3 and O 2 as precursors. The anode was tested for the methanol oxidation reaction (MOR) in a three-electrode electrochemical set-up and it showed improved catalytic activity compared to a reference sample of Pt deposited on flat Si. It is demonstrated that ALD could be a MEMS compatible deposition technique for Si-based fuel cell applications.

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Atomic Layer Deposition (ALD) Co-Deposited Pt−Ru Binary and Pt Skin Catalysts for Concentrated Methanol Oxidation

Cited by 83 publications

References 52 publications

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic layer deposition of ruthenium surface-coating on porous platinum catalysts for high-performance direct ethanol solid oxide fuel cells

Electrocatalytic Activity of Pt Grown by ALD on Carbon Nanotubes for Si-Based DMFC Applications

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Atomic Layer Deposition (ALD) Co-Deposited Pt−Ru Binary and Pt Skin Catalysts for Concentrated Methanol Oxidation

Cited by 83 publications

References 52 publications

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic layer deposition of ruthenium surface-coating on porous platinum catalysts for high-performance direct ethanol solid oxide fuel cells

Electrocatalytic Activity of Pt Grown by ALD on Carbon Nanotubes for Si-Based DMFC Applications

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Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth

Atomic Layer Deposition of Crystalline MoS₂ Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth