Atomic-layer-deposited H:MoOx function layer as efficient hole selective passivating contact in silicon solar cells

Xu, Zhiyuan; Liu, Xiaoning; Zhou, Jiakai; Yu, Yingzhe; Song, Yuan; Huang, Qian; Ren, Huizhi; Ding, Yi; Zhang, Xiaodan; Zhao, Ying; Hou, Guofu

doi:10.1016/j.mtener.2023.101362

Cited by 2 publications

(2 citation statements)

References 32 publications

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“…Similarly, a study integrating a thin chromium dioxide (CrO x ) barrier film aimed to mitigate elemental diffusion, enhancing the stability of p-Si/ALD-MoO x /Ag stacks. [241] [160,167,192,[235][236][237][238][239][240][241][242][243][244][245][246][247][248][249][250][251][252] Figure 15. a) The J-V curve of p-Si solar cells featuring a full-area MoO x and a SiO x /MoO x /NiO x rear contact (relevant parameters are provided in the inset).…”

Section: High-wf Tmosmentioning

confidence: 99%

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Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Li,

Xu,

Yan

et al. 2024

Advanced Energy Materials

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Solar photovoltaics (PV) are poised to be crucial in limiting global warming by replacing traditional fossil fuel generation. Within the PV community, crystalline silicon (c‐Si) solar cells currently dominate, having made significant efficiency breakthroughs in recent years. These advancements are primarily due to innovations in solar cell technology, particularly in developing passivating contact schemes. As such, this review article comprehensively examines the evolution of high‐efficiency c‐Si solar cells, adopting a historical perspective to investigate the advancements in passivation contact techniques and materials to state‐of‐the‐art cell designs. Additionally, this work deeply studies the recent advances and critical design principles underlying each developed passivation scheme. Eventually, this work identifies existing challenges and proposes insights into future directions for c‐Si solar cells through diverse passivating contact strategies.

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Section: High-wf Tmosmentioning

confidence: 99%

“…Figure 14. a) Reported efficiency of c-Si solar cells featuring the a) hybrid or b) SHJ-based structures. Data points were obtained from the articles [160,167,192,[235][236][237][238][239][240][241][242][243][244][245][246][247][248][249][250][251][252]. …”

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confidence: 99%

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Li,

Xu,

Yan

et al. 2024

Advanced Energy Materials

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Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

Bartholazzi,

Shehata,

Samundsett

et al. 2024

Solar RRL

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The need to increase transparency in existing passivating contacts for crystalline silicon solar cells has motivated the development of transparent contacts based on transition metal oxides (TMOs). Among hole‐selective materials, molybdenum oxide (MoOx) has achieved the greatest success so far. However, despite providing low contact resistivity, MoOx relies on an intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) interlayer to achieve high levels of surface passivation and thus high open‐circuit voltage at a device level, partially defeating the objective of improved transparency. Herein, we report unprecedented performance for a‐Si:H‐free MoOx‐based contacts by employing an alternative passivating interlayer based on a well‐engineered chlorine‐containing Al‐alloyed titanium oxide/titanium dioxide (AlyTiOx/TiO2 )stack. The resulting AlyTiOx/TiO2/MoOx stack achieved record levels of passivation, reaching J0 values as low as 16 fA cm−2, closer to values reported for a‐Si:H‐based contacts, while maintaining lower contact resistivity, well below 100 mΩ cm−2. Additionally, the stack presents improved transparency compared to a‐Si:H‐based contacts, with gains in short‐circuit current density of at least 0.8 mA cm−2. The work pushes the performance of hole‐selective passivating contacts based on TMOs to new levels, enabling a record efficiency of 22.53% for cells with fully transparent hole‐selective passivating contacts. This work serves as an important stepping stone toward low‐thermal‐budget, simple manufacturing of high‐efficiency solar cells.

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Atomic-layer-deposited H:MoOx function layer as efficient hole selective passivating contact in silicon solar cells

Cited by 2 publications

References 32 publications

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives

Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

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