Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

Yum, Jung Hwan; Akyol, T.; Lei, Ming; Hudnall, Todd W.; Bersuker, G.; Downer, Michael; Bielawski, Christopher W.; Lee, J. C.; Banerjee, Sanjay K.

doi:10.1063/1.3553872

Cited by 46 publications

(28 citation statements)

References 9 publications

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“…184,192 Relative to SiO 2 , all the investigated dielectrics have substantially higher values of RI and k. Relative to SiN:H, however, only HfO 2 has a significantly higher RI and k.…”

mentioning

confidence: 99%

“…Owing to an exceptionally high thermal conductivity, bulk BeO has already been utilized as a thermal heat sink substrate in demanding heat dissipation, microwave, and high-power applications. 104 More recently, BeO has shown great promise as a barrier layer and gate dielectric in both Si CMOS and III-V high-power and highfrequency device applications, [105][106][107][108][109] and as an alloying agent and oxygen diffusion barrier for ZnO-based optoelectronic devices. [110][111][112] As we will show, ALD BeO exhibits several compelling properties which may make it useful in many additional high-performance applications where extremes in material properties are required.…”

Section: Ecs Journal Of Solid State Science and Technology 6 (10) N1mentioning

confidence: 99%

“…18,159,184,190 However, the field dependence of the leakage current and breakdown characteristics differed amongst the materials. Specifically, AlN, BeO, and SiN:H exhibited a near continuous increase in electrical leakage up to the compliance current set for the IV measurements (10 -4 A).…”

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confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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“…184,192 Relative to SiO 2 , all the investigated dielectrics have substantially higher values of RI and k. Relative to SiN:H, however, only HfO 2 has a significantly higher RI and k.…”

mentioning

confidence: 99%

Section: Ecs Journal Of Solid State Science and Technology 6 (10) N1mentioning

confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…[413][414][415] ALD BeO has most recently garnered significant interest as a gate dielectric for Si 416 and III-V 417,418 transistor devices due to excellent passivation 419 and other electrical properties. 413 From a DB perspective, ALD BeO has also been recently demonstrated as an effective oxygen diffusion barrier for high-k gate dielectric formation on Si.…”

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…The current and growing potential applications of beryllium oxide add to this motivation. Indeed, BeO is a special alkali earth oxide; it crystallizes in wurtzite structure at room temperature while other alkali earth oxides crystallize in rock salt structure at the same temperature [23]- [38]. The ionic bonding in BeO is reported to have some covalent features.…”

Section: Introductionmentioning

confidence: 99%

Accurate Electronic, Transport, and Related Properties of Wurtzite Beryllium Oxide (w-BeO)

Bamba¹,

Inakpenu²,

Diakite³

et al. 2017

JMP

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We report details of our ab-initio, self-consistent density functional theory (DFT) calculations of electronic and related properties of wurtzite beryllium oxide (w-BeO). Our calculations were performed using a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) formalism. Unlike previous DFT studies of BeO, the implementation of the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by the work of Ekuma and Franklin (BZW-EF), ensures the full physical content of the results of our calculations, as per the derivation of DFT. We present our computed band gap, total and partial densities of states, and effective masses. Our direct band gap of 10.30 eV, reached by using the experimental lattice constants of a = 2.6979 Å and c = 4.3772 Å at room temperature, agrees very well the experimental values of 10.28 eV and 10.3 eV. The hybridization of O and Be p states in the upper valence bands, as per our calculated, partial densities of states, are in agreement with corresponding, experimental findings.

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Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

Cited by 46 publications

References 9 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Accurate Electronic, Transport, and Related Properties of Wurtzite Beryllium Oxide (w-BeO)

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