Atomic layer-by-layer deposition of h-BN(0001) on cobalt: a building block for spintronics and graphene electronics

Beatty, John; Cao, Yuan; Tanabe, Iori; Driver, M. Sky; Dowben, Peter A.; Kelber, Jeffry A.

doi:10.1088/2053-1591/1/4/046410

Cited by 19 publications

(35 citation statements)

References 22 publications

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“…This may allow formation of an epitaxial (1 × 1) interface with high structural perfection, similarly to the recently studied graphene/Co(0001) interface [39]. Indeed, several works reported formation of h-BN films of different thickness on the Co(0001) surface and confirmed strict orientation of ultrathin h-BN [40][41][42]. However, the crystal structure of the h-BN monolayer on the Co(0001) surface is yet to be studied.…”

Section: Introductionmentioning

confidence: 57%

Site- and spin-dependent coupling at the highly ordered h -BN/Co(0001) interface

et al. 2018

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Using photoelectron diffraction and spectroscopy, we explore the structural and electronic properties of the hexagonal boron nitride (h-BN) monolayer epitaxially grown on the Co(0001) surface. Perfect matching of the lattice parameters allows formation of a well-defined interface where the B atoms occupy the hollow sites while the N atoms are located above the Co atoms. The corrugation of the h-BN monolayer and its distance from the substrate were determined by means of R-factor analysis. The obtained results are in perfect agreement with the density functional theory (DFT) predictions. The electronic structure of the interface is characterized by a significant mixing of the h-BN and Co states. Such hybridized states appear in the h-BN band gap. This allows to obtain atomically resolved scanning tunneling microscopy (STM) images from the formally insulating 2D material being in contact with ferromagnetic metal. The STM images reveal mainly the nitrogen sublattice due to a dominating contribution of nitrogen orbitals to the electronic states at the Fermi level. We believe that the high quality, well-defined structure and interesting electronic properties make the h-BN/Co(0001) interface suitable for spintronic applications.

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Section: Introductionmentioning

confidence: 57%

Site- and spin-dependent coupling at the highly ordered h -BN/Co(0001) interface

et al. 2018

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“…Therefore, bilayer and trilayer h-BN(0001) films are deposited onto Co(0001) without evidence of Co oxidation, promising for applications in spintronics and graphene electronics. 79 Recently, multilayer azimuthally oriented h-BN thin films showing highly ordered large areas and domains (up to 20 µm) are uniformly and continuously deposited on Co(0001) by ALD followed by UHV annealing, as demonstrated by cross-section HRTEM (Figure 3a). 61 Then, graphene is grown on pinhole-free h-BN/Co(0001) using Molecular Beam Epitaxy (MBE) as shown in Figure 3b.…”

Section: Boron Halidementioning

confidence: 99%

Atomic layer deposition of stable 2D materials

Hao¹,

Marichy²,

Journet³

2018

2D Mater.

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Following the graphene isolation, strong interest in two dimensional (2D) materials has been driven by their outstanding properties. Their typical intrinsic structure, including strong in-plane covalent bonding and weak out-of-plane Van der Waals interaction, makes them highly promising in diverse areas such as electronics, catalysis, and environment. Growth of 2D materials requires a synthesis approach able to control the deposition onto a support at the atomic scale. Thanks to their simplicity, versatility and ability to control thickness at the angstrom level, Atomic Layer Deposition (ALD) and its variant Atomic Layer Etching (ALET) appear as ones of the most suited techniques to synthesize 2D materials. The development of ALD technique for fabricating 2D materials in the last ten years justifies reviewing its most recent groundbreaking discoveries and progresses. Particular attention will be paid to stable 2D materials especially graphene, h-BN, Mo and W dichalcogenides and few monolayered metal oxides. Specificities and outputs of ALD for 2D material as well as emerging directions and remaining technical challenges will be highlighted. layers. This kind of materials exhibits interesting properties related to their size restriction: electronic confinement, modifying both optical and electronic properties, and high surface to volume ratio that affects the mechanical and chemical properties. 4,5 Therefore, 2D materials are highly attractive due to their potential in cutting edge domains such as micro-, and opto-electronics 4,6 as well as renewable energy, 4,7-9 catalysis, 10,11 gas sensing 12,13 and environment. 4,7,14,15 They are also exciting because of their possibility to be stacked into VdW heterostructures combining and/or tuning their chemical and physical properties. 6,[16][17][18] However, since 2D materials are atomically thin, a suitable manufacturing process capable of controlling their fabrication in terms of structure, composition, thickness, defects, purity and crystallinity without degradation of their original properties is necessary. Two approaches can be considered: the top-down and bottom-up synthetic routes. 19 Historically, top-down approach has first been developed using mechanical and chemical exfoliation techniques, 1,2,20,21 the first example being the well-known graphene exfoliation using scotch tape.Later on, etching processes have been adapted. Recently, Atomic Layer Etching (ALET), 22 the top down variant of Atomic Layer Deposition (ALD), has been introduced for fabricating 2D materials. On the other hand, bottom-up techniques have largely been developed using conventional thin film deposition. These techniques include sputtering, evaporation and Chemical Vapor Deposition (CVD). 3,23,24 However, they are mainly based on either high temperature processes, substrate restrictive deposition or low thickness control. 21,25,26 Amongst all the fabrication processes, ALD appears to be one of the most suited techniques to synthesize 2D materials, because of its simplicity, versatility and c...

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“…They deposited the BN films at 277 C and then treated them with post-annealing at 727 C in a vacuum. In addition, Co(0001) (Figure 3D), 61,62 RuO 2 (110), 63 and Ni(111) 66 substrates were also favorable for achieving crystalline h-BN. In all cases, post-treatment higher than 427 C in a vacuum was applied.…”

Section: -Bnhmentioning

confidence: 99%

“…b RT indicates room temperature. c Annealing in a vacuum at 727 C,60 427 C,61,62 and 527 C,63 respectively.d The films grown at 900 C belongs to the precursor-dependent characteristics of CVD growth, instead of ALD growth. e This deposition process applied electron-enhanced atomic layer deposition (EEALD).…”

mentioning

confidence: 99%

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

Cai

Han

Wang

et al. 2020

Matter

112

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Since the discovery of graphene, there has been an ever-increasing interest in two-dimensional (2D) layered materials with exceptional properties. To this end, a variety of synthesis methods have been developed. However, it is still challenging to produce large-scale high-quality single-crystalline 2D materials. In this regard, atomic layer deposition (ALD) has recently shown great promise and has stimulated more and more research efforts, ascribed to its unique growth mechanism and distinguished capabilities to achieve nanoscale films with excellent uniformity, unrivaled conformality, and atomic-scale controllability. This review comprehensively summarizes recent progress on ALD for 2D atomic sheets, including 25 different materials and more than 80 ALD processes. This work highlights different technical routes to ALD, their precise controllability, and their underlying principles for 2D materials. It is expected that this work will help boost more research efforts for controllable growth of high-quality 2D materials via ALD.

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Atomic layer-by-layer deposition of h-BN(0001) on cobalt: a building block for spintronics and graphene electronics

Cited by 19 publications

References 22 publications

Site- and spin-dependent coupling at the highly ordered h -BN/Co(0001) interface

Site- and spin-dependent coupling at the highly ordered h -BN/Co(0001) interface

Atomic layer deposition of stable 2D materials

Atomic Layer Deposition of Two-Dimensional Layered Materials: Processes, Growth Mechanisms, and Characteristics

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