Atomic Hydrogen Regeneration and Defect Passivation in Hydrogenated Silicon under Neutron Irradiation

Abstract

Concentration profiles of the centers with shallow and deep levels and the distribution of generation lifetimes after fast neutron irradiation of n‐ and p‐type silicon, hydrogenized in the hydrogen plasma of a HF discharge and in boiling distilled water, are determined by means of measuring of capacitance—voltage (C—V) and current—voltage (I—V) characteristics and DLTS spectra in Schottky diodes. The passivation effects are observed both for point‐like radiation defects and for radiation defects in disordered regions (DR) due to the regeneration of mobile hydrogen atoms from bonded forms (pairs of shallow acceptor—hydrogen, H2, and others) under the neutron irradiation. The decrease of the degradation rate of the generation lifetimes is observed in hydrogenated silicon layers under irradiation. It is found that the efficiency of passivation of the radiation defects is greater in n‐type than in p‐type silicon, and depending on technique and duration of hydrogenation, the efficiency of passivation drops down with increasing neutron dose.