Atomic force microscope study of carbon thin films prepared by pulsed laser deposition

Zhang

Journal of Applied Physics

et al. 2005

Temperature dependent properties of silicon containing diamondlike carbon films prepared by plasma source ion implantation J. Appl. Phys. 107, 083307 (2010); 10.1063/1.3394002 Ion-induced surface activation, chemical sputtering, and hydrogen release during plasma-assisted hydrocarbon film growth J. Appl. Phys. 97, 094904 (2005); 10.1063/1.1883729Electron cyclotron resonance deposition, structure, and properties of oxygen incorporated hydrogenated diamondlike amorphous carbon filmsIn this study, we compare the deposition processes and surface properties of tetrahedral amorphous carbon ͑ta-C͒ films from filtered pulsed cathodic arc discharge ͑PCAD͒ and hydrogenated amorphous carbon ͑a-C:H͒ films from electron cyclotron resonance ͑ECR͒-plasma source ion implantation. The ion energy distributions ͑IEDs͒ of filtered-PCAD at various filter inductances and Ar gas pressures were measured using an ion energy analyzer. The IEDs of the carbon species in the absence of background gas and at low gas pressures are well fitted by shifted Maxwellian distributions. Film hardness and surface properties show a clear dependence on the IEDs. ta-C films with surface roughness at an atomic level and thin ͑0.3-0.9 nm͒ graphitelike layers at the film surfaces were deposited at various filter inductances in the highly ionized plasmas with the full width at half maximum ion energy distributions of 9-16 eV. The a-C:H films deposited at higher H / C ratios of reactive gases were covered with hydrogen and sp 3 bonded carbon-enriched layers due to the simultaneous interaction of hydrocarbon species and atomic hydrogen. The effects of deposited species and ion energies on film surface properties were analyzed. Some carbon species have insufficient energies to break the delocalized ͑nC͒ bonds at the graphitelike film surface, and they can govern film formation via surface diffusion and coalescence of nuclei. Dangling bonds created by atomic hydrogen lead to uniform chemisorption of hydrocarbon species from the ECR plasmas. The deposition processes of ta-C and a-C:H films are discussed on the basis of the experimental results.

Section: Introductionmentioning

confidence: 99%

Growth processes and surface properties of diamondlike carbon films

Zhang

Journal of Applied Physics

et al. 2005

“…One of the major field of study is directed toward synthesizing new thin films by pulsed laser deposition technique. [3,6] Pulse laser causes the instantaneous explosion on the target material surface to form a plasma and molecular cloud called plume. Absorption of laser energy and the successive energy conversion process, particle evaporation process, their interaction, evolution of the heated target surface are closely connected with each other, and the senario to explian the whole phenomena is still far from completed.…”

Section: Introductionmentioning

confidence: 99%

Observation of water-shock-wave propagation emanated from the roughened optical fiber end surface by the pulse laser energy input

Nakahara

Nagayama

1999

SPIE Proceedings

Self Cite

Pressure enhancement of the generated shock waves in water has been found, when pulse laser energy is transmiued through an optical fiber whose end surface is intentionally roughened. More effective high-pressure shock generation can be possible by the aluminum coating on the roughened fiber surface. In case of the moderate laser energy of about 50 mJ input to the fiber, it is found that the phenomena are dependent on (1) the roughness, (2) the fiber diameter, and (3) the ambient medium. Shock wave generation can be detected successively by the laser input, but found to degrade down. Cavitation bubbles have also been observed after each shot. When the fiber end is in air, an intense and long-strechted flash can be observed. We have observed the phenomena by the pulse laser shadowgraphy.

“…8,9) This method is appropriate for fabricating multilayered film because of the following points: (i) congruent transfer between the target and the deposited film; (ii) low-temperature growth compared with other methods; and (iii) delicate control of the film thickness due to the pulsed deposition.…”

mentioning

confidence: 99%

Ferromagnetic Iron Silicide Thin Films Prepared by Pulsed-Laser Deposition

Yoshitake

Nakagauchi

Nagayama

2003

Jpn. J. Appl. Phys.

Self Cite

The Fe-Si system has both semiconducting phases, such as -FeSi 2 , amorphous FeSi 2 and FeSi, and the ferromagnetic phase of Fe 3 Si. In order to fabricate a heterostructural thin film consisting of semiconductor and ferromagnetic metal of a Fe-Si system, it is indispensable for the ferromagnetic Fe 3 Si thin film to be grown at a low substrate temperature. In this work, we studied the growth of Fe 3 Si thin film by pulsed-laser deposition, and found that the single-phase Fe 3 Si thin film and ferromagnetic amorphous-like thin film were grown at substrate temperatures of 300 C and room temperature, respectively.