Atomic-emission spectral analysis of highly pure cadmium alkyl compounds

Зорин, А. Д.; Emel'yanova, O. A.; Занозина, В. Ф.; Markova, M. L.; Karataev, E. N.; Степанова, Л. В.; Feshchenko, I. A.

doi:10.1007/bf00659923

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[19] As-deposited films produced by these techniques are often amorphous and require high temperature annealing to promote crystallization and to enhance optoelectronic properties. We are, however [21] and pyrophoric, [22] dimethylcadmium. We recently reported the first cadmium coordination complex, Cd(hfa) 2 (TMEDA), to be successfully utilized as an efficient CdO MOCVD precursor.…”

Section: Mocvd Growth Of Transparent Conductingmentioning

confidence: 99%

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

Metz¹,

Lane²,

Kannewurf³

et al. 2004

Chemical Vapor Deposition

View full text Add to dashboard Cite

Transparent conducting oxides (TCOs) are an important component of a great many opto-electronic device structures, including flat panel displays, organic light-emitting diodes (OLEDs), and photovoltaics (PVs).[1] Tin-doped indium oxide (ITO) is the best known and most studied of these materials, [2,3] but has severe limitations. The high price of indium, sub-optimal conductivity and transparency window, and chemical/interfacial instability in many PV [4] and OLED [5] structures, have stimulated a search for alternative materials. Cd 2 SnO 4 has been the subject of intense investigation, [6±11] exploring its potential as a low-cost, high-performance alternative to ITO, and Cd 2 SnO 4 has been incorporated into PV device structures with promising results (efficiencies > 15 %). [12,13] Cd 2 SnO 4 thin films have been prepared by several different growth techniques including radio frequency (RF) magnetron sputtering, [9,10,13±16] RF reactive sputtering, [6] pulsed laser deposition (PLD), [17] dip coating, [8,18] and sol±gel methods. [19] As-deposited films produced by these techniques are often amorphous and require high temperature annealing to promote crystallization and to enhance optoelectronic properties. We are, however Its attractive characteristics include a straightforward, onestep aqueous synthesis under ambient conditions from commercially available starting materials, excellent volatility, as well as excellent air and thermal stability. Further advances in cadmium precursor technology by our laboratory, [24] and the complementary approaches of other groups, [25] have resulted in an increased film growth capability for discovery, synthesis, and optimization of cadmium-containing opto-electronic materials. In this contribution, we report the first growth of transparent conducting Cd 2 SnO 4 films by a MOCVD process. As-deposited, the films are highly crystalline on glass substrates at the relatively low growth temperature of 365 C, and have electrical and optical properties rivaling those of commercial ITO. CdO-SnO 2 films were grown on Corning 1737F glass (softening point = 975 C) at 365 C, and carrier gas ratios were adjusted until films with 2:1 Cd/Sn ratios (± 1 %) were obtained, as determined by inductively coupled plasma atomic-emission spectroscopy (ICP-AES). Films grown for 1.5 h have a thickness of 970 nm by profilometry (growth rate = 10.8 nm min ±1 ). The as-deposited films are highly crystalline with the cubic spinel Cd 2 SnO 4 crystal structure, [26] as determined by X-ray diffraction (XRD) h±2h scans ( Fig. 1). A small amount of CdO may be responsible for the broad (400) reflection at 39. Scanning electron miCommunications

show abstract

Section: Mocvd Growth Of Transparent Conductingmentioning

confidence: 99%

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

Metz¹,

Lane²,

Kannewurf³

et al. 2004

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…Our continuing interest in the growth of high-mobility, high-transparency CdO-based TCOs of precise composition has necessitated development of more effective metal−organic Cd precursors than are currently available. Until recently, there have been few alternatives to highly toxic and pyrophoric dimethylcadmium. Our group recently reported the first cadmium coordination complex to be successfully utilized as an efficient CdO MOCVD precursor, , Cd(hfa) 2 (TMEDA).…”

Section: Introductionmentioning

confidence: 99%

Transparent Conducting Oxides: Texture and Microstructure Effects on Charge Carrier Mobility in MOCVD-Derived CdO Thin Films Grown with A Thermally Stable, Low-Melting Precursor

et al. 2004

View full text Add to dashboard Cite

A series of low-melting, thermally stable cadmium metal-organic chemical vapor deposition (MOCVD) precursors have been synthesized, structurally and spectroscopically characterized, and implemented in growth of highly conductive and transparent CdO thin films. One member of the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N-diethyl-N',N'-dimethyl-ethylenediamine)cadmium(II), Cd(hfa)(2)()(N,N-DE-N',N'-DMEDA), represents a particularly significant improvement over previously available Cd precursors, owing to the low melting point and robust thermal stability. High-quality CdO films were grown by MOCVD on glass and single-crystal MgO(100) between 300 and 412 degrees C. Film growth parameters and substrate surface have large effects on microstructure and electron carrier transport properties. Enhanced mobilities observed for highly biaxially textured films grown on MgO(100) vs glass are attributed, on the basis of DC charge transport and microstructure analysis, to a reduction in neutral impurity scattering and/or to a more densely packed grain microstructure. Although single-grained films grown on MgO(100) exhibit greater mobilities than analogues with discrete approximately 100 nm grains and similar texture, this effect is attributed, on the basis of charge transport and Hall effect measurements as well as optical reflectivity analysis, to differences in carrier concentration rather than to reduced grain boundary scattering. Unprecedented conductivities and mobilities as high as 11,000 S/cm and 307 cm(2)/V.s, respectively, are obtained for epitaxial single-grained films (X-ray diffraction parameters: fwhm(omega) = 0.30 degrees, fwhm(phi) = 0.27 degrees ) grown in situ on MgO(100) at a relatively low temperature (400 degrees C).

show abstract

Atomic-emission spectral analysis of highly pure cadmium alkyl compounds

Cited by 2 publications

References 0 publications

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

Transparent Conducting Oxides: Texture and Microstructure Effects on Charge Carrier Mobility in MOCVD-Derived CdO Thin Films Grown with A Thermally Stable, Low-Melting Precursor

Contact Info

Product

Resources

About

Atomic-emission spectral analysis of highly pure cadmium alkyl compounds

Cited by 2 publications

References 0 publications

MOCVD Growth of Transparent Conducting Cd2SnO4 Thin Films

MOCVD Growth of Transparent Conducting Cd2SnO4 Thin Films

Transparent Conducting Oxides: Texture and Microstructure Effects on Charge Carrier Mobility in MOCVD-Derived CdO Thin Films Grown with A Thermally Stable, Low-Melting Precursor

Contact Info

Product

Resources

About

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films

MOCVD Growth of Transparent Conducting Cd₂SnO₄ Thin Films