2017
DOI: 10.1021/acsnano.6b08036
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Atomic Defects and Doping of Monolayer NbSe2

Abstract: We have investigated the structure of atomic defects within monolayer NbSe encapsulated in graphene by combining atomic resolution transmission electron microscope imaging, density functional theory (DFT) calculations, and strain mapping using geometric phase analysis. We demonstrate the presence of stable Nb and Se monovacancies in monolayer material and reveal that Se monovacancies are the most frequently observed defects, consistent with DFT calculations of their formation energy. We reveal that adventitiou… Show more

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Cited by 70 publications
(68 citation statements)
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“…Since a bare NbSe 2 monolayer film is sensitive to the ambient environment, we transferred the NbSe 2 flakes grown on SiO 2 substrate with graphene encapsulation (see “Methods” section), constructing a graphene/NbSe 2 /graphene sandwich structure for STEM imaging. Such structures have been demonstrated to be effective in protecting sensitive monolayer materials from being oxidized 32 . Figure 2a shows a low magnification ADF-STEM image of a large area of monolayer NbSe 2 sandwiched by graphene (schematic shown in the inset ), where little oxidization is observed.…”
Section: Resultsmentioning
confidence: 99%
“…Since a bare NbSe 2 monolayer film is sensitive to the ambient environment, we transferred the NbSe 2 flakes grown on SiO 2 substrate with graphene encapsulation (see “Methods” section), constructing a graphene/NbSe 2 /graphene sandwich structure for STEM imaging. Such structures have been demonstrated to be effective in protecting sensitive monolayer materials from being oxidized 32 . Figure 2a shows a low magnification ADF-STEM image of a large area of monolayer NbSe 2 sandwiched by graphene (schematic shown in the inset ), where little oxidization is observed.…”
Section: Resultsmentioning
confidence: 99%
“…Recent theory has revealed that nonreciprocal charge transport occurs in non-centrosymmetric superconductors when vortices driven by the external charge current move among the asymmetric pinning potentials in the vortex flow regime 15 . In 2D NbSe 2 , the asymmetric pinning potentials naturally appear as a consequence of disorder 15 such as defects [30][31][32] in 2D crystals with inversion symmetry breaking, as shown in Fig. 1c.…”
Section: Max1mentioning
confidence: 97%
“…The most studied van der Waals SC is the 2H polytype of NbSe 2 (in the following simply indicated as NbSe 2 ). [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] This material can be easily exfoliated in few-layer-thick flakes and then encapsulated in hBN. 25 Typical devices for transport measurements have a size of several micrometers.…”
mentioning
confidence: 99%