Atomic and energy structure of InAs/AlAs quantum dots

Шамирзаев, Т. С.; Nenashev, A. V.; Гутаковский, А. К.; Kalagin, A. K.; Журавлев, К. С.; Larsson, Mats; Holtz, Per-Olof

doi:10.1103/physrevb.78.085323

Cited by 67 publications

(87 citation statements)

References 64 publications

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“…11,12 Hence, the exciton recombination dynamics, namely the recombination time τ and the lifetime distribution G(τ ) can yield valuable information on this interface.…”

Section: Introductionmentioning

confidence: 99%

Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

et al. 2011

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The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function G(τ ), which allows one to explain the photoluminescence decay with one fitting parameter only.

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“…11,12 Hence, the exciton recombination dynamics, namely the recombination time τ and the lifetime distribution G(τ ) can yield valuable information on this interface.…”

Section: Introductionmentioning

confidence: 99%

Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

et al. 2011

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“…We pay a detailed attention to the vicinity of the resonances corresponding to the integers m = 1 and m = 2. The resonance features, to which we have paid our attention, are calculated in detail in the region of about (1/ The overall magnitude of the FWHM comes out from the theory smaller than it is reported in the experimental paper [9]. The discrepancy between the size of the FWHM in theory and experiment may indicate a need to consider an extension of the presently used the model with only two nondegenerate bound states model of the InAs quantum dot.…”

Section: Numerical Results For Inas and Cdse Quantum Dotsmentioning

confidence: 69%

Optical Line Width in Quantum Dot or Nanotransistor

Král

Menšı́k

2010

e-J. Surf. Sci. Nanotechnol.

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The width of the spectral line of the optical transitions in quantum dots is studied theoretically on the basis of the electron coupling to the longitudinal optical phonons in polar semiconductors. With using the self-consistent Born approximation to the electronic self-energy, we are able to reproduce one of the main experimental results obtained on CdSe and CuBr quantum dots, namely the linear dependence of the width of the optical line on the inverse of the quantum dot diameter. In addition to it, the theory allows to expect certain resonance features on the linear dependence of line width. Extensions of the present line-width theory may appear suitable in order to reach a better agreement in describing adequately the behavior of the line width in CdSe and InAs quantum dots.

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“…Структуры содержали один слой КТ между слоями AlAs. Технология выращи-вания гетероструктр подробно описана в работе [2]. Для защиты верхнего слоя AlAs от окисления выращивался покровный слой GaAs.…”

Section: детали экспериментаunclassified

“…2. В спектрах присутствуют две полосы ФЛ: высокоэнергетическая, обозначенная на рисунке как QD, обусловленная рекомбинацией носителей заряда в квантовых точках InAs [2], и низкоэнергетическая, обозначенная на рисунке как S. Отношение интенсив-ностей этих полос изменяется при изменении толщины покровного слоя GaAs. В гетероструктуре с толщиной покровного слоя 20 нм интенсивность низкоэнергетиче-ской полосы S в 1.5 раза больше интенсивности высоко-энергетической полосы QD.…”

Section: результаты экспериментаunclassified

Люминесценция приповерхностного гетероперехода GaAs/AlAs в гетероструктурах на основе AlAs

Nikiforov¹,

Abramkin²,

Шамирзаев³

2017

Физика И Техника Полупроводников

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Высокая реакционная способность алюминия приводит к тому, что поверхность гетероструктур на основе AlAs необходимо защищать от окисления слоем GaAs. В результате в приповерхностной области таких гетероструктур всегда есть гетеропереход GaAs/AlAs. В работе показано, что при нерезонансном оптическом возбуждении структур с этим гетеропереходом связана полоса фотолюминесценции, интенсивность которой определяется толщиной и типом легирования защитного слоя GaAs.

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Atomic and energy structure of InAs/AlAs quantum dots

Cited by 67 publications

References 64 publications

Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

Optical Line Width in Quantum Dot or Nanotransistor

Люминесценция приповерхностного гетероперехода GaAs/AlAs в гетероструктурах на основе AlAs

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