Atomic and electronic structure of the nonpolar<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>GaN</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>1</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo stretchy="false">¯</mml:mo></mml:mover><mml:mn>00</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>surface

Bertelli, M.; Löptien, P.; Wenderoth, M.; Rizzi, A.; Ulbrich, R. G.; Righi, Maria Clelia; Ferretti, Andrea; Martin‐Samos, Layla; Bertoni, Carlo Maria; Catellani, Alessandra

doi:10.1103/physrevb.80.115324

Cited by 69 publications

(64 citation statements)

References 29 publications

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“…Furthermore, atomically resolved tunneling spectroscopy shows that the filled and empty dangling bond states are spatially shifted relative to each other (Fig. 6b), in agreement with the structural positions of the surface N and Ga atoms, respectively [25]. For unpinned surfaces, at negative tunneling biases the tip-induced band bending induces a strong electron accumulation in the empty conduction band states.…”

Section: Wurtzite Gansupporting

confidence: 57%

“…2a) [18] as well as by atomically resolved scanning tunneling microscopy (STM) images (Fig. 2b) [18,25]. For the GaN(1120) surface an STM observation suggests also a 1 1 ¥ surface unit cell [24].…”

Section: Surface Unit Cellmentioning

confidence: 99%

“…STM experiments at the GaN(1010) surface suggest no electronic surface states in the fundamental band gap [18,25]. For surfaces at which the Fermi energy is pinned by a high defect density inside of the band gap, the normalized conductivity exhibits a surface band gap equal to the bulk band gap (Fig.…”

Section: Wurtzite Ganmentioning

confidence: 99%

“…6a) rection. From this effect it is suggested that no intrinsic surface states should be present within the fundamental band gap [25].…”

Section: Wurtzite Ganmentioning

confidence: 99%

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Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Wurtzite Gansupporting

confidence: 57%

Section: Surface Unit Cellmentioning

confidence: 99%

Section: Wurtzite Ganmentioning

confidence: 99%

“…6a) rection. From this effect it is suggested that no intrinsic surface states should be present within the fundamental band gap [25].…”

Section: Wurtzite Ganmentioning

confidence: 99%

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Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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“…The GaN stem and the AlN/GaN heterostructure were laterally surrounded by an AlN shell, and the whole structure was embedded in a rectangular prism of air, which permits the elastic deformation of misfit strain. Surface states were modeled as a surface charge density of 2 × 10 12 cm −2 at the air/semiconductor interfaces [49]. The presence of {1−102} facets in the AlN sections was taken into account, as illustrated in Fig.…”

Section: Discussionmentioning

confidence: 99%

Long-lived excitons in GaN/AlN nanowire heterostructures

et al. 2015

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GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts.

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Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

et al. 2016

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The atomic-scale origin of the unusually high performance and long-term stability of wurtzite p-GaN oriented nanowire arrays is revealed. Nitrogen termination of both the polar (0001¯) top face and the nonpolar (101¯0) side faces of the nanowires is essential for long-term stability and high efficiency. Such a distinct atomic configuration ensures not only stability against (photo) oxidation in air and in water/electrolyte but, as importantly, also provides the necessary overall reverse crystal polarization needed for efficient hole extraction in p-GaN.

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Atomic and electronic structure of the nonpolarGaN(11¯00)surface

Cited by 69 publications

References 29 publications

Non‐polar group‐III nitride semiconductor surfaces

Non‐polar group‐III nitride semiconductor surfaces

Long-lived excitons in GaN/AlN nanowire heterostructures

Atomic‐Scale Origin of Long‐Term Stability and High Performance of p‐GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

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