Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Bennett, S. E.; Saxey, David W.; Kappers, Menno J.; Barnard, J. S.; Humphreys, C. J.; Smith, G. D. W.; Oliver, Rachel A.

doi:10.1063/1.3610468

Cited by 49 publications

(27 citation statements)

References 14 publications

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“…Following the experimental data in Refs. [46][47][48][49][50][51], we treat InGaN as a random alloy. To realize different microscopic configurations, our calculations have been repeated ten times with changing the atomic distribution.…”

Section: Model Systemmentioning

confidence: 99%

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Schulz¹,

et al. 2015

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We present an atomistic description of the electronic and optical properties of In0.25Ga0.75N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties, leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data.

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Section: Model Systemmentioning

confidence: 99%

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Schulz¹,

et al. 2015

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“…The measurements indicate that the peak InN fraction is around 20%, which is much larger than what could be obtained by 1D profiling due to averaging effects between high-and low-In content regions. We also remark that the distribution of In in the QWs not illuminated by the electron beam in the STEM but imaged by APT is similar to the QWs imaged by STEM, indicating that the exposure to the electron beam was sufficiently short not to induce an artificial In rearrangement within the system [42].…”

Section: A Correlative Study Of Ingan/gan Nanowire Quantum Wellsmentioning

confidence: 73%

Correlative Optical Spectroscopy and Atom Probe Tomography

Rigutti

2016

Acta Phys. Pol. A

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This lecture will introduce and revise recent experimental developments on correlative laser-assisted atom probe tomography and optical spectroscopy, with a particular attention to the domain of semiconductor nanostructures. The main goal of correlative microscopy is to gain a deeper insight in materials science studies. For the materials scientist, indeed, the possibility of establishing a link between optical spectroscopic properties of a given system and the reconstruction of its 3D structure and composition by atom probe tomography yields an unprecedented insight into the complex influence of the structure on the electronic states and on the optical transitions characterizing the system. This lecture will therefore revise the different approaches by which it is possible to correlate optical spectroscopy experiments -in particular micro-photoluminescence with atom probe tomography and, possibly, with transmission electron microscopy. Dedicated sample preparation protocols and recent case studies will be reported. Finally, a perspective approach will be introduced, in which the same femtosecond laser pulse could be exploited not only for triggering ion evaporation, but also photon emission in situ in the atom probe itself.

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“…The strain calculation itself can be treated in a multiscale way as described in [16]. The InGaN alloy is treated as a random alloy, assuming that the spatial distribution of indium atoms follows a uniform random distribution, since there is growing consensus that InGaN is in fact forming a uniform random alloy [36,37]. The corresponding statistical probability mass function is that of the binomial distribution.…”

Section: Multiscale Coupling Schemesmentioning

confidence: 99%

Multiscale approaches for the simulation of InGaN/GaN LEDs

Maur

2015

J Comput Electron

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In this work we review basic aspects of multi-\ud scale approaches for combining atomistic with continuous\ud media descriptions and quantum mechanical with semiclassi-\ud cal driftdiffusion transport models for LED simulations. We\ud show how hybrid coupling of the Green's function formalism\ud with driftdiffusion simulations can give additional insight\ud into device behaviour without compromising too much com-\ud putational efficiency, and that the inclusion of atomistic tight-\ud binding calculations in a multiscale framework can help in\ud understanding specific features related to alloy fluctuations

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Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Cited by 49 publications

References 14 publications

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

Correlative Optical Spectroscopy and Atom Probe Tomography

Multiscale approaches for the simulation of InGaN/GaN LEDs

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