Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

Kitchen, Dale; Richardella, Anthony; Tang, Jian-Ming; Flatté, Michael E.; Yazdani, Ali

doi:10.1038/nature04971

Cited by 282 publications

(335 citation statements)

References 28 publications

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“…8 support the results of the classical spin model 16,20 and are in good agreement with other theoretical and experimental results. 4,19 We would like to comment on one important feature of the electronic structure of Mn in bulk GaAs. According In fact the three (predominantly) p−levels appearing in the gap should be degenerate in the perfectly tetragonal environment of an impurity in bulk GaAs.…”

Section: A Mn Dopants On (110) Gaas Surfacementioning

confidence: 99%

“…1 The development of scanning tunneling microscopy (STM) based techniques enabled the investigation of substitutional dopants at a semiconductor surface with unprecedented accuracy and degree of details. [2][3][4][5][6][7][8][9] The experimental advances have stimulated theoretical studies of individual magnetic impurities in semiconductors, based both on first-principles calculations [10][11][12][13][14][15] and microscopic tight-binding (TB) models. [16][17][18][19][20][21][22][23][24] Approaches based on the TB models are particularly convenient to explore the solotronics limit of dilute impurities in semiconductor hosts.…”

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confidence: 99%

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Electronic structure and magnetic properties of Mn and Fe impurities near the GaAs (110) surface

et al. 2014

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Section: A Mn Dopants On (110) Gaas Surfacementioning

confidence: 99%

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confidence: 99%

Electronic structure and magnetic properties of Mn and Fe impurities near the GaAs (110) surface

et al. 2014

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“…Probing a single magnetic atom in a solid-state environment is now possible by scanning tunneling microscopy ͑STM͒, both in metallic 1 and semiconducting surfaces, [2][3][4][5] and by single exciton spectroscopy in semiconductor quantum dots, [6][7][8] among other techniques. These experiments permit addressing a single-quantum object: the spin of the magnetic atom, and studying its exchange interactions with surrounding carriers.…”

Section: Introductionmentioning

confidence: 99%

Single-exciton spectroscopy of single Mn doped InAs quantum dots

2008

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The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom, and the acceptor hole. Our model permits linking the photoluminescence spectra to the Mn spin states after photon emission. We focus on the relation between the charge state of the Mn, A 0 or A − , and the different spectra which result through either band-to-band or band-to-acceptor transitions. We consider both neutral and negatively charged dots. Our model is able to account for recent experimental results on single Mn doped InAs photoluminescence spectra and can be used to account for future experiments in GaAs quantum dots. Similarities and differences with the case of single Mn doped CdTe quantum dots are discussed.

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“…However probing and manipulating such a system require extremely high sensitivity. Several techniques have been successfully developed over the last few years to address a single or few coupled spins: electrical detection [4,5], scanning tunneling microscopy (STM) [6,7,8,9], magnetic resonance force microscopic [10], optical spectroscopy [11]. Recently, Besombes et al [12,13,14,15] have investigated the spin state of a single Mn +2 ion embedded in a single II-VI self-assembled quantum dot (QD).…”

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Optically Probing the Fine Structure of a Single Mn Atom in an InAs Quantum Dot

et al. 2007

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We report on the optical spectroscopy of a single InAs/GaAs quantum dot (QD) doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A 0 whose effective spin J = 1 is significantly perturbed by the QD potential and its associated strain field. The spin interaction with photo-carriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of µeV, but vanishingly small for electrons.PACS numbers: 71.35. Pq, 78.67.Hc,75.75.+a,78.55.Cr The spin state of a single magnetic impurity could be envisaged as a primary building block of a nanoscopic spin-based device [1,2] in particular for the realization of quantum bits [3]. However probing and manipulating such a system require extremely high sensitivity. Several techniques have been successfully developed over the last few years to address a single or few coupled spins: electrical detection [4,5], scanning tunneling microscopy (STM) [6,7,8,9], magnetic resonance force microscopic [10], optical spectroscopy [11]. Recently, Besombes et al. [12,13,14,15] have investigated the spin state of a single Mn +2 ion embedded in a single II-VI self-assembled quantum dot (QD). In this system the magnetic impurity is an isoelectronic center in a 3d 5 configuration with spin S = 5/2. The large exchange interaction between the spin of the photocreated carriers confined inside the dot and the Mn magnetic moment induces strong modifications of the QD photoluminescence (PL) spectrum: 2S + 1 = 6 discrete lines are observed, reflecting the Mn spin state at the instant when the exciton recombines.The case of the Mn ion is different in GaAs, since the impurity is an acceptor in this matrix with a rather large activation energy (113 meV). Two types of Mn centers exist in GaAs, the A 0 and the A − states. In low doped GaAs (below 10 19 cm −2 ), the former is dominant. It corresponds to the 3d 5 + h configuration, where h is a hole bound to the Mn ion with a Bohr radius around 1 nm [16]. When considering a single Mn impurity in InAs QD several issues arise: the impurity configuration, its possible change when photo-carriers are captured, the influence on the binding energy of excitonic complexes, the strength and sign of the effective exchange interaction with each of the carriers (electron or hole) in the QD S-shell. In this Letter, we report the first evidences of a single Mn impurity in an individual InAs QD which enable us to answer most of the above questions. In particular, we find that the formation of excitons, biexciton and trions is weakly perturbed by the impurity center, whereas the effective exchange coupling with the Mn impurity (found in the A 0 configuration) is ferromagnetic for holes (a few 100 µeV's) and almost zero for the electrons.The sample was grown by molecular beam epitaxy on a semi-insulating GaAs [001] substrate. The Mn-doped quantum layer was embedded inbetween an electron reservoir and a Schottky gate. This des...

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Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions

Abstract: The discovery of ferromagnetism in Mn doped

Cited by 282 publications

References 28 publications

Electronic structure and magnetic properties of Mn and Fe impurities near the GaAs (110) surface

Electronic structure and magnetic properties of Mn and Fe impurities near the GaAs (110) surface

Single-exciton spectroscopy of single Mn doped InAs quantum dots

Optically Probing the Fine Structure of a Single Mn Atom in an InAs Quantum Dot

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