Atmospherically hydrothermal assisted solid-state reaction synthesis of ultrafine BaTiO3 powder with high tetragonality

Luan, Saiwei; Wang, Pengfei; Zhang, Lei; He, Yan-Mei; Huang, Xiong; Jian, Gang; Liu, Cuicui; Yu, Shuhui; Sun, Rong; Cao, Xiuhua; Fu, Zhenxiao

doi:10.1007/s10832-023-00308-y

Cited by 3 publications

(1 citation statement)

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“…Therefore, when the sintering temperature is increased to 1250 • C, the energy provided by the external environment is sufficient, and this encourages sample crystallization and growth; this sample has the best dielectric properties. The energy provided by the external environment is sufficient and sufficient to crystallize and grow the sample, which means that it has the best dielectric properties [22,23].…”

Section: Effect Of Sc Ion Doping On Sintering Temperaturementioning

confidence: 99%

Effect of A- or B-Site Sc Doping on Sintering Temperature, Crystal Structure, Microstructure, and Properties of BaZrxTi1−xO3 Ceramics

Zhang,

Li,

2023

Materials

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BaZrxTi1−xO3 (BZT) ceramics with different concentrations of Sc ions were prepared, and the effect of doping concentration on the crystal substitution type of BZT was studied. The substitution position of the Sc ion in BZT was related to its concentration. When the concentration of Sc ions was low (<1.0 mol %), it showed B-site substitution; otherwise, Sc ions showed A-site substitution. In addition, the effects of the Sc ion concentration on the sintering temperature, crystal structure, microstructure, and properties of BZT were also studied. The results showed that the introduction of Sc ions can reduce the sintering temperature to 1250 °C. When the concentration of Sc ions was 1.0 mol % and 2.0 mol %, the high dielectric constants of BZT were 14,273 and 12,747, respectively.

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Section: Effect Of Sc Ion Doping On Sintering Temperaturementioning

confidence: 99%