Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Illiberi, A.; Scherpenborg, R; Roozeboom, F.; Poodt, Paul

doi:10.1149/2.002405jss

Cited by 34 publications

(34 citation statements)

References 27 publications

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“…9,26,27,29,36,40 Nitrogen-doping of ZnO reduces its carrier concentration (thus increasing resistivity, as shown in Table II), 9,26 and it has been claimed that it can make ZnO p-type with post-deposition treatment (Table II). 26,57 The nitrogen dopant is introduced by mixing ammonia with the water oxidant precursor, and this is the method used for both conventional and spatial ALD ZnO:N. 26,58 The non-pyrophoric and low-cost nature of the ammonia precursor is in contrast to the expensive, pyrophoric organometallic materials that are often used as ALD and AP-SALD precursors, 5,14 and hence ammonia has been widely studied in both ALD and AP-SALD ZnO.…”

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

“…A resistivity decrease of three orders of magnitude resulted and a doping efficiency of 95% was obtained (Table II), which is comparable to that obtained by other techniques, such as sputtering. 29 As with AP-SALD AZO, In-doped ZnO has a high transparency of 90%, making this material highly suitable for TCOs. However, a major limitation to the industrial application of any ZnO-based material is that the resistivity increases in hot, humid environments due to structural degradation.…”

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

“…For example, the various terms previously employed to describe these reactors are atmospheric atomic layer deposition (AALD), [23][24][25][26] spatial atmospheric atomic layer deposition (SAALD), 5,27,28 and atmospheric spatial atomic layer deposition. 29 Here, the term is standardized to AP-SALD. AP-SALD reactors have also previously been simply termed "spatial atomic layer deposition" (S-ALD or SALD).…”

Section: Introduction: Atmospheric Pressure Spatial Atomic Layer Dmentioning

confidence: 99%

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Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

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Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

Section: B Zno Carrier Property Tuningmentioning

confidence: 99%

Section: Introduction: Atmospheric Pressure Spatial Atomic Layer Dmentioning

confidence: 99%

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Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

et al. 2015

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“…In particular, according to previous reports, In-or Ga-doped ZnO thin films exhibited resistivities as low as *10 -3 X cm, while Al doping lowered the resistivity to the order of 10 -2 X cm [21,22]. However, doping of In in ZnO thin films reveals various issues such as degradation of ZnO crystallinity [23][24][25], deterioration of electrical resistivity with the increase in doping level [24,26,27], decrease in carrier concentration or mobility [28][29][30], and an increase in surface roughness [31]. With increasing In doping from 0.2 to 2.0 wt% [23], and at In concentrations of 1.98 at.…”

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confidence: 93%

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Kim

et al. 2015

J Sol-Gel Sci Technol

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In-doped ZnO thin films were prepared by a sol-gel spin coating method. Since several issues with In doping have been reported, such as degradation of crystallinity and deterioration of electrical resistivity at high Indoping levels, co-doping with Ga and electron beam treatment was demonstrated in this study. When In dopant was added to the ZnO thin film at 0.5 mol%, it increased the carrier concentration, thereby reducing the resistivity of the film. In contrast, further doping by Ga in the presence of In did not significantly change the electrical properties. When electron beam treatment was conducted on ZnO films, the optical band gap was increased and the carrier concentration and mobility were increased. In particular, a 0.5 mol% Indoped ZnO that received electron beam treatment at 2 keV exhibited an electrical resistivity as low as 4.8 9 10 -2 X cm, while 57.1 X cm was obtained from the pristine ZnO thin film. When the ZnO films were applied to crystalline Si solar cells, conversion efficiency significantly increased from 10.37 % for the cell with pristine ZnO thin film to 11.45 % with the In-doped and electron beamtreated ZnO thin film. Graphical Abstract 10

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“…Firstly proposed by Suntola et al, 15 sALD is receiving increasing attention within the industry because of its high throughput in terms of fast rate deposition of high-quality material for large-area applications. [16][17][18][19][20][21][22] Therefore, spatial atmospheric-pressure plasma-enhanced ALD uniquely combines the advantages of a fast ALD concept with the possibility of growing insulating and conducting materials at atmospheric conditions and at relatively low temperatures compatible with flexible and temperature sensitive substrates yet without the undesired size restrictions imposed by vacuum systems. Although the use of plasma on substrates with pronounced topographies remains challenging, the advantage of using atmospheric plasma resides in the low kinetic energy of the ionic species, which translates into low ion bombardment and, consequently, reduced ion damage.…”

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confidence: 99%

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO₂for Low-Temperature, Large-Area Applications

Mione

Katsouras

Creyghton

et al. 2017

ECS J. Solid State Sci. Technol.

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High permittivity (high-k) materials have received considerable attention as alternatives to SiO 2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO 2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates and uses atmospheric-pressure plasma to activate surface reactions at lower temperatures. We used tetrakis(ethylmethylamino)zirconium (TEMAZ) as precursor and O 2 plasma as co-reactant at temperatures between 150 and 250 • C. Deposition rates as high as 0.17 nm/cycle were achieved with N-and C-contents as low as 0.4% and 1.5%, respectively. Growth rate, film crystallinity and impurity contents in the films were found to improve with increasing deposition temperature. The measured relative permittivity lying between 18 and 28 with leakage currents in the order of 5 × 10 −8 A/cm 2 demonstrates that atmospheric PE-sALD is a powerful technique to deposit ultrathin, high-quality dielectrics for low-temperature, large-scale microelectronic applications. The continuous improvement in performance of integrated circuits has been based on miniaturization of components. The effective gate length in field-effect transistors shrinks to smaller and smaller sizes and, consequently, the thickness of the gate oxide decreases.1 SiO 2 has been the most popular gate oxide material used in microelectronic manufacturing due to its thermal stability and ideal interface quality on Si. However, during the past fifty years the thickness of the SiO 2 gate oxide has already been reduced to its physical limit of 1.2 nm, below which a critical gate leakage of 1 A/cm 2 is exceeded. 2 To overcome this problem, dielectrics with a high permittivity (high-k materials) have been extensively investigated as promising substitutes of the conventional SiO 2 for CMOS and DRAM technology. The high permittivity (k > 10) ensures high capacitance for thicker gate oxide layers while greatly reducing tunneling and gate leakage currents. 3,4 Among high-k oxides, ZrO 2 is considered one of the most promising SiO 2 alternatives due to its high dielectric constant (k = 20-25), large bandgap (5.1-7.8 eV) and thermodynamical stability. 5,6 ZrO 2 proved to be a good dielectric in transistor applications with leakage current of the order of 10 −6 -10 −9 A/cm 2 and in DRAM capacitor applications especially when present in ZrO 2 /Al 2 O 3 /ZrO 2 nanolaminate structures.7 High-k materials are also relevant for low-power applications of flexible electronics. 5,8-11High-k materials are deposited in a variety of chemical and physical deposition techniques including metallorganic chemical vapor deposition (MOCVD), atomic layer deposition (ALD), sol-gel and sputtering. ALD has proven to be the most suitable technique for high-k deposition due to its unique nanoscale thickness and layer uniformity control. In its conventional time-sequenced mode, ALD is a gas phase deposition technique in which the substrate surface is exposed altern...

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Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Cited by 34 publications

References 27 publications

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO₂for Low-Temperature, Large-Area Applications

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Atmospheric Spatial Atomic Layer Deposition of In-Doped ZnO

Cited by 34 publications

References 27 publications

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Improvement in electrical properties of sol–gel-derived In-doped ZnO thin film by electron beam treatment

Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO2for Low-Temperature, Large-Area Applications

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Atmospheric Pressure Plasma Enhanced Spatial ALD of ZrO₂for Low-Temperature, Large-Area Applications