2000
DOI: 10.1016/s0022-0248(99)00611-9
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Atmospheric pressure vapor-phase growth of ZnO using a chloride source

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Cited by 33 publications
(32 citation statements)
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“…Moreover, increasing of the input partial pressure of a Zn precursor to maintain the growth rate causes a pre-reaction between Zn and O precursors in the vapor phase by nature. Takahashi et al [13] demonstrated the growth of ZnO by halide vapor phase epitaxy (HVPE) in the temperature range from 550 to 950 1C using ZnCl 2 powder and O 2 gas. This implies that the sticking coefficient of ZnCl 2 is higher than that of Zn, and ZnCl 2 does not decompose at a temperature of 950 1C, leading to the growth of ZnO at high temperatures.…”
Section: Introductionmentioning
confidence: 99%
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“…Moreover, increasing of the input partial pressure of a Zn precursor to maintain the growth rate causes a pre-reaction between Zn and O precursors in the vapor phase by nature. Takahashi et al [13] demonstrated the growth of ZnO by halide vapor phase epitaxy (HVPE) in the temperature range from 550 to 950 1C using ZnCl 2 powder and O 2 gas. This implies that the sticking coefficient of ZnCl 2 is higher than that of Zn, and ZnCl 2 does not decompose at a temperature of 950 1C, leading to the growth of ZnO at high temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…This implies that the sticking coefficient of ZnCl 2 is higher than that of Zn, and ZnCl 2 does not decompose at a temperature of 950 1C, leading to the growth of ZnO at high temperatures. To date, ZnCl 2 powder has been used as a starting material and vaporized by heating for HVPE growth [13,14]. Due to the unavailability of high-purity ZnCl 2 powder and the relatively high deliquescence, ZnCl 2 as the staring material for semiconductor-grade ZnO is not suitable.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO is currently in use, or being considered for use, as phosphors, [1] as component in electrooptical devices, [2±8] as piezoelectric transducers, [1,9,10] varistors, [1,11,12] UV and microwave absorbers, [1,10] gas sensors, [1,13,14,15] and for transparent conducting films. [1,16] ZnO can be grown by means of a variety of techniques including vapor-phase transport, [18,19] sol±gel methods, [19,20] hydrothermal growth, [21,22] melt growth, [23] chemical vapor deposition (MOCVD), [24] electrochemical deposition, [25±28] laser ablation, [29] sputtering, [30] molecular beam epitaxy, [31,32] and spraying arc-discharge. [33] However, large-scale use will require the development of simple, low-cost approaches.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO lms have been widely studied owing to their usefulness in electronic or optoelectronic applications, gas sensors, solar cell windows, and surface acoustic-wave devices [14]. sition (MOCVD) using diethylzinc (DEZ) and CO [15].…”
Section: Introductionmentioning
confidence: 99%