Atmospheric pressure PE-CVD of silicon based coatings using a glow dielectric barrier discharge

Martin, Steve W.; Massines, Françoise; Ghérardi, Nicolas; Jiménez, Carmen

doi:10.1016/j.surfcoat.2003.08.008

Cited by 77 publications

(44 citation statements)

References 8 publications

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“…When a few ppmv of SiH 4 are injected with N 2 and few 100 ppmv of N 2 O in the plasma reactor, a SiO x layer is formed on the dielectric materials. Chemical pathways from Silane to SiO x have been identified and modelled in low pressure rf-plasmas [10] and are similar at atmospheric pressure [2]. With SiH 4 , aerosol concentration downstream of the DBD (~10 8 cm -3 ) is higher than for physical nucleation alone, proving that a portion of the particles detected arises from reactive nucleation.…”

Section: Reactive Nucleation From Plasma-silane Interaction For Thin Film Depositionmentioning

confidence: 85%

“…The gas flow rate between the plates was adjusted between 2 and 4 L/min by mass flow controllers, leading to transit time and gas velocity in the reactor between 9, 18 ms and 1.6, 3.3 m.s -1 respectively. The experimental setup is detailed in [2]. The aerosol particle concentrations downstream of the DBD reactor were measured using a Condensation Particle Counter (CPC).…”

Section: Figure 1: Experimental Setupmentioning

confidence: 99%

“…In TD, streamer formation is not observed, but a larger homogeneous discharge occurs with respect to the more confined FD. Both regimes are used to create silicon-based films at atmospheric pressure from diluted Silane (SiH 4 with nitrous oxide in nitrogen), leading to Chemical Vapour Deposition (CVD) of condensable species and radicals, as well as SiO x particles [2,3].…”

Section: Introductionmentioning

confidence: 99%

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Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO_xfilm deposition

Jidenko¹,

Jiménez²,

Massines³

et al. 2007

J. Phys. D: Appl. Phys.

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This paper focuses on charging and electro-deposition of nano-particles produced in a mixture of Silane and nitrous oxide diluted in N 2 , by Dielectric Barrier Discharge (DBD) at atmospheric pressure for SiO x film deposition. Townsend Discharge (TD) and Filamentary Discharge (FD) are compared with and without SiH 4 . Without SiH 4 , particles are produced by filament-surface interaction. Both filament-surface and plasma-Silane interactions lead to bimodal particle size distributions from nucleation and agglomeration. With SiH 4 , particle formation and growth imply the same mechanisms in TD and FD. Faster dynamics in FD are related to higher local volume energy density than in TD. From scanning electron microscope images of the film and measurements downstream of the DBD reactor, the diameter of the particle produced is below 50 nm. An analytical model of electro-collection in ac electric field is used to investigate nano-particle charging. To account for the selective electro-deposition leading to particles smaller than 50 nm being included in the layer and to the particle size distribution measured downstream of the DBD, the same size-dependent charging and electrodeposition of particle are involved, with different charging dynamics in TD and FD.

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Section: Reactive Nucleation From Plasma-silane Interaction For Thin Film Depositionmentioning

confidence: 85%

Section: Figure 1: Experimental Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO_xfilm deposition

Jidenko¹,

Jiménez²,

Massines³

et al. 2007

J. Phys. D: Appl. Phys.

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“…While HMDSO represents a more complex molecular structure than silane monomers previously discussed, it is possible that the particulate formation mechanisms identified from studies of low pressure silane deposition also take place during particulate formation from siloxane monomers. Martin et al [38] investigated atmospheric plasma deposition of SiO 2 films from SiH 4 and N 2 O mixtures and concluded that particulate nucleation followed by growth occurred due to either neutral or ionized monosilicon radicals. In the step growth processes for particulate nucleation outlined in the literature, [12,39,40] three stages are identified; (i) initiation and rapid growth of particulates up to 2 nm due to formation of heavy negative ions, (ii) secondary growth due to particulate coagulation caused by negative ion attachment and positive ion attachment, and (iii) saturation of particulate growth.…”

Section: Hmdso -5 ML Min à1 Depositionmentioning

confidence: 99%

Investigation of the Formation Mechanism of Aligned Nano-Structured Siloxane Coatings Deposited Using an Atmospheric Plasma Jet

Stallard

Iqbal

Turner

et al. 2013

Plasma Process. Polym.

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In this study surfaces exhibiting a nano-structured morphology have been creating in a single step deposition process using an atmospheric pressure plasma jet. Plasma polymerized coatings were deposited from a HMDSO monomer which was introduced into a He/N 2 plasma in the form of aerosolized droplets. By controlling the plasma discharge regime and monomer flow rate, the surface morphology was altered to create surfaces exhibiting an aligned fibrous morphology or a surface consisting of spherical agglomerates. Optical emission spectroscopy showed variation in photon emission energy depending on the He/N 2 ratio. Both thermal imaging and numerical simulations indicate that vaporization of the monomer occurs, which facilitates monomer polymerization in the gas phase and subsequent particulate nucleation. XPS analysis identified a higher amount of carbon bound siloxy species at regions where greater particulate formation was observed on the substrate. Cross-sectional SEM and He-ion imaging indicate that the formation of fibrous structures is associated with localized surface charging, which gives rise to selective agglomeration of semi-amorphous particulates which become aligned on the substrate. Modeling of droplet behavior in the plasma indicates that under conditions of higher monomer flow rate, saturation within the plasma occurs which facilitates nucleation of particulates, while experimental and modeling results indicate surface driven growth mechanisms are more likely to occur at lower precursor flow rates.

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“…Atmospheric pressure dielectric barrier discharge (DBD) techniques have been developed over the past few years and used for the production of silicon-based thin films from silane or organosilicon precursors [20]- [28], and recent studies have demonstrated the ability to produce a large panel of siliconbased coatings in a Townsend DBD at atmospheric pressure, depending on the amount of oxidizing gas added in the mixture [26], [28]- [30]. However, these PECVD techniques have never been studied for the production of conformal thin films in trenches.…”

Section: Introductionmentioning

confidence: 99%

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

Larclause

Paulmier

Enache

et al. 2009

IEEE Trans. Plasma Sci.

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In this paper, homogeneous and dense silicon-based coatings have been deposited from hexamethyldisiloxane (HMDSO: Si 2 O(CH 3 ) 6 ) on patterned silicium in a Townsend dielectric barrier discharge operating at atmospheric pressure. A brief description of the physical mechanisms ruling the step coverage is first described, followed by a description of the atmospheric pressure plasma process used. The step coverage is discussed with regard to the aspect ratio of the patterned wafers. Coatings deposited in and after the discharge region have also been characterized to understand the influence of plasma activation. In order to understand the experimental results, numerical simulations have been performed using a simplified reactive transport model. These results provide information and first general insight on the physical mechanisms ruling the conformity of silicon-based films deposited with this technique.Index Terms-Atmospheric pressure Townsend discharge (APTD), dielectric barrier discharge (DBD), glow discharges, plasma-enhanced chemical vapor deposition (PECVD), reactive transport modeling, silicon oxide, step coverage.

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Atmospheric pressure PE-CVD of silicon based coatings using a glow dielectric barrier discharge

Cited by 77 publications

References 8 publications

Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO_xfilm deposition

Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO_xfilm deposition

Investigation of the Formation Mechanism of Aligned Nano-Structured Siloxane Coatings Deposited Using an Atmospheric Plasma Jet

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

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Atmospheric pressure PE-CVD of silicon based coatings using a glow dielectric barrier discharge

Cited by 77 publications

References 8 publications

Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiOxfilm deposition

Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiOxfilm deposition

Investigation of the Formation Mechanism of Aligned Nano-Structured Siloxane Coatings Deposited Using an Atmospheric Plasma Jet

Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms

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Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO_xfilm deposition

Nano-particle size-dependent charging and electro-deposition in dielectric barrier discharges at atmospheric pressure for thin SiO_xfilm deposition