Atmospheric pressure organometallic vapor phase epitaxy growth of high-mobility GaAs using trimethylgallium and arsine

Abstract

Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high-mobility GaAs are described in this letter. Low-temperature photoluminescence and temperature-dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities <1014 cm−3 were measured in the highest purity samples.

Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD

“…The radiative decay of the neutral acceptor bound exciton (A 0 , X), neutral donor bound exciton (D 0 , X), and the neutral donor bound vacancy (free holes) (h, D 0 ) are well resolved at 1.5212, 1.5145 and 1.5134 eV confirming the high quality of the GaAs layer being investigated. The upper and lower polariton branches of the free exciton are clearly observable, and are similar to results reported for highpurity GaAs grown from triethylgallium/arsine [13] and TMG/ arsine [14][15][16]. PL spectra for the GaAs (Arsine Sample 1) were measured at various excitation densities.…”

“…Of interest is the full width at half maximum (FWHM) of the near-band emission for Arsine Sample 2, which decreased by 0.873 eV relative to that of the Sample 1. The decrease in (D 0 , X) indicates that p-type impurities (possibly Mg) exist in the epilayer [13,20,21]. Fig.…”

Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas

“…La constante de proporcionalidad se denomina eficiencia de crecimiento (EC), y es independiente del flujo del elemento del grupo V (AsH 3 ), de la temperatura o de la orientación del substrato. En este rango de temperaturas se han reportado las mejores características de GaAs intrínseco crecido por MOVPE [Hanna90].…”