Atmospheric Pressure CVD of Molybdenum Diselenide Films on Glass.

Boscher, Nicolas D.; Carmalt, Claire J.; Palgrave, Robert G.; Gil-Tomás, Jesús J.; Parkin, Ivan P.

doi:10.1002/chin.200705205

Cited by 3 publications

(3 citation statements)

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“…This limited value is the result of the limited absorption of the semiconductor (MoS 2 ) because of its thickness and limited coverage. The photocurrent generation in TMDC heterostructure generally suffers from two main limitations from an applied point of view, which are their slow response time35 and their strong dependence of the photoresponse with the light intensity6162. In the following we investigate these two properties.…”

Section: Resultsmentioning

confidence: 99%

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Pierucci¹,

Henck²,

Naylor³

et al. 2016

Sci Rep

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Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.

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Section: Resultsmentioning

confidence: 99%

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Pierucci¹,

Henck²,

Naylor³

et al. 2016

Sci Rep

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“…More sophisticated routes for the synthesis of these atomic layered materials include molecular beam epitaxy (50) and chemical vapor deposition (CVD). CVD (Figure 3) of TMDs has been successful with a variety of metalorganics [e.g., W(CO) 6 , Mo(CO) 6 ] (51-53) and metal-chlorides (e.g., MoCl 5 , WCl 5 , WOCl 5 , VOCl 5 ) (51,(54)(55)(56), combined with a wide range of chalcogen precursors [H 2 S, HS(CH 2 ) 2 SH, HSC(CH 3 ) 3 , diethyl selenide, di-tert-butylselenide] (51)(52)(53)(54)(55)(56). Each of these processes, although not refined to synthesize atomically thin layers, provides important insight into precursor chemistries suitable for monolayer TMD synthesis.…”

Section: Figurementioning

confidence: 99%

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

Das

Robinson

Dubey

et al. 2015

Annu. Rev. Mater. Res.

586

405

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Interest in 2D materials and van der Waals solids is growing exponentially across various scientific and engineering disciplines owing to their fascinating electrical, optical, chemical, and thermal properties. Whereas the micromechanical exfoliation technique has been adopted for rapid material characterization and demonstration of innovative device ideas based on these 2D systems, significant advances have recently been made in large-scale homogeneous and heterogeneous growth of these materials. This review reflects recent progress and outlines future prospects of these novel 2D materials. We provide a holistic overview of the different synthesis and characterization techniques, electronic and photonic device characteristics, and catalytic properties of transition metal dichalcogenides and their heterostructures. We also comment on the challenges that need to be overcome for full-scale commercial implementation of this novel class of layered materials. 20.1

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“…However, there are little reports on the ZT values of pure SnSe. Several methods have been developed to prepare SnSe: chemical vapour deposition [125], electrodeposition [126], electron beam irradiation [127], direct vapour transport [120] and chemical synthesis [121].…”

Section: Snsementioning

confidence: 99%

Multiphase thermoelectrics : effect of second phase in ex-SITU Cu7Te4-Bi0.4Sb1.6Te3 and in-SITU SnTe-SnSe nanocomposites

Tan¹

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Atmospheric Pressure CVD of Molybdenum Diselenide Films on Glass.

Cited by 3 publications

References 1 publication

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

Multiphase thermoelectrics : effect of second phase in ex-SITU Cu7Te4-Bi0.4Sb1.6Te3 and in-SITU SnTe-SnSe nanocomposites

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